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Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit


A key challenge in the development of two-dimensional (2D) devices is the fabrication of metal–semiconductor junctions with minimal contact resistance and depinned energy levels. An ideal solution for practical applications is to make contacts between 2D van der Waals semiconductors and 2D van der Waals metals. Here we report the wafer-scale production of patterned layers of metallic transition metal ditellurides on different substrates. Our tungsten ditelluride and molybdenum ditelluride layers, which are grown using a tellurization process applied to a precursor transition metal layer, have an electronic performance comparable to that of mechanically exfoliated flakes and can be combined with the 2D semiconductor molybdenum disulfide. The resulting metal–semiconductor junctions are free from significant disorder effects and Fermi-level pinning, and are used to create monolayer molybdenum disulfide field-effect transistors. The Schottky barrier heights of the devices also largely follow the trend of the Schottky–Mott limit.

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Fig. 1: Position-controllable growth of WTe2 atomic layers directly on a SiO2/Si substrate.
Fig. 2: Electro- and magnetotransporting behaviours of WTe2 films.
Fig. 3: Atomically thin FETs composed of the MoS2 channel and WTe2 contact.
Fig. 4: Low SB nature of (W,Mo)Te2 contacts for atomically thin FETs.

Data availability

The data that support the plots within this paper and other findings of this study are available from the corresponding author upon reasonable request.


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This work was supported by the Nano-Material Technology Development Program (Grant no. 2017M3A7B8065377) through the National Research Foundation (NRF) of Korea funded by the Ministry of Science, ICT and Future Planning. This work has benefited from the use of the facilities at UNIST Central Research Facilities.

Author information




S.S. performed most of the experiments with assistance from Y.S., S.-Y. Kim, D.H.L., J.W., S.Y., Y.L., J.K., J.-H.C.; J.H.K. and Z.L. performed the high-resolution TEM imaging of the samples; I.O. and J.-W.Y. performed the low-temperature magnetoresistance measurements; W.N. and H.C. performed the Raman measurements; S.S. and S.-Y. Kwon wrote the manuscript; all the authors revised and commented on the manuscript; S.-Y. Kwon planned and supervised the project.

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Correspondence to Soon-Yong Kwon.

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Supplementary Information

Supplementary Notes 1 and 2, Figs. 1–24 and Tables 1–3.

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Song, S., Sim, Y., Kim, SY. et al. Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit. Nat Electron 3, 207–215 (2020).

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