Two-dimensional layered semiconductors such as MoS2 and WSe2 have attracted considerable interest in recent times. Exploring the full potential of these layered materials requires precise spatial modulation of their chemical composition and electronic properties to create well-defined heterostructures. Here, we report the growth of compositionally modulated MoS2–MoSe2 and WS2–WSe2 lateral heterostructures by in situ modulation of the vapour-phase reactants during growth of these two-dimensional crystals. Raman and photoluminescence mapping studies demonstrate that the resulting heterostructure nanosheets exhibit clear structural and optical modulation. Transmission electron microscopy and elemental mapping studies reveal a single crystalline structure with opposite modulation of sulphur and selenium distributions across the heterostructure interface. Electrical transport studies demonstrate that the WSe2–WS2 heterojunctions form lateral p–n diodes and photodiodes, and can be used to create complementary inverters with high voltage gain. Our study is an important advance in the development of layered semiconductor heterostructures, an essential step towards achieving functional electronics and optoelectronics.
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The authors acknowledge the Nanoelectronics Research Facility (NRF) at UCLA for technical support. The authors thank N.O. Weiss for preparing the schematics in Fig. 1. A.P. acknowledges support from the National Basic Research Program of China (no. 2012CB932703) and the National Natural Science Foundation of China (11374092). J.J. and R.Y. acknowledge support from the National Natural Science Foundation of China (21025521, 21221003). Y.H. acknowledges a National Institutes of Health Director's New Innovator Award Program (1DP2OD007279). X.D. acknowledges support by the National Science Foundation (CAREER award no. 0956171).
The authors declare no competing financial interests.
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Duan, X., Wang, C., Shaw, J. et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nature Nanotech 9, 1024–1030 (2014). https://doi.org/10.1038/nnano.2014.222
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