Abstract
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.
Similar content being viewed by others
Introduction
Semiconducting carbon nanotubes (CNTs) are considered to be promising channel materials for the next-generation nanoelectronic devices, in particular, for high-performance field-effect transistors (FETs)1,2,3. After approximately 15 years of extensive investigation, significant progress has been made in the fabrication of CNT-based nanoelectronic devices1,2,3, and the physics of the CNT FET has been firmly established4,5,6,7. Both p-type8,9,10,11 and n-type12,13,14,15,16 CNT FETs have been fabricated, displaying outstanding performance approaching the ballistic limit11,13,14. However, progress in developing CNT FET-based integrated circuits (ICs) has been slow. Although several basic logic gates, including NOT, NAND, NOR, AND, OR17,18,19,20, and the more complex five-stage ring oscillator have been fabricated21, CNT-based logical circuits that are more complex than an XOR gate have not been realised22,23,24,25. In particular, a CNT-based full adder, which is a basic function block in the arithmetic logic unit (ALU) of the modern digital computer26, has not been constructed. In addition to the well-known challenges related to construction materials, such as controlling position and chirality during CNT growth, CNT-based nanoelectronic circuits have scarcely been considered at the architectural level, and many important questions remain unanswered. Of particular interest is the problem of determining the most suitable circuit design configuration for CNT-based ICs27,28,29. An ideal design configuration for CNT-based ICs should fulfill at least the following two requirements. The first and most fundamental requirement is that circuit blocks designed with such a circuit configuration must possess sufficient signal gain and driving ability to guarantee signal fidelity and propagation in the circuit. The second requirement is that the design configuration should take the full advantage of the superb properties of CNT FETs and use as few transistors as possible while operating at higher speed and/or with lower power dissipation than conventional complementary metal-oxide semiconductor (CMOS) configurations.
In this article, we focus on exploring a suitable circuit design configuration for CNT-based ICs, and constructing basic gates and more complex circuits for an ALU. At the physical level, high-performance CNT-based FETs are fabricated via a doping-free approach12. At the architectural level, CNT-based ICs are designed following the configuration of a pass-transistor logic (PTL), which significantly reduces the number of transistors required27,28,29. However, conventional Si-based PTL circuits encountered two major drawbacks; namely, threshold voltage drop and loss of gain, which have so far prevented PTL circuits from being widely used in ICs29. Here we show that both drawbacks can be eliminated in CNT-based PTL circuits via threshold voltage engineering and combining PTL circuits with CMOS inverters. Basic logic gates such as OR and AND, as well as the more complex full adder, multiplexer (MUX) and demultiplexer (DEMUX) circuits are successfully fabricated on individual CNTs for the first time. In addition, benefitting from the improved immunity of PTL circuits to threshold voltage fluctuations, CNT-based circuits with gate lengths of 1 μm can be powered by a single power supply operating at a voltage as low as 1 V, or even 0.4 V in some cases.
Results
Device fabrication and characterisation
All the CNT-based FETs used in this work are fabricated on individual single-walled CNTs (SWCNTs) via a doping-free process12. A previously developed self-aligned top-gate structure13 is used for the fabrication of both n-type and p-type FETs (Fig. 1a), where the polarity is determined by the contact metal, that is, Sc for n-type12 and Pd for p-type CNT FETs9. As the conduction and valence bands of a semiconducting CNT are symmetric near the Fermi level, and the carrier injection efficiency is at the same level for both n- and p-contacts20, n-type and p-type CNT FETs show nearly symmetric electronic characteristics (Fig. 1b–d) and simultaneously high performance, including peak transconductances greater than 15 μS and saturation currents up to 15 μA at a bias of 1.0 V. The output characteristics of these devices are presented in Figure 1d, which illustrates the almost symmetric Ids−Vds curve for a pair of p- and n-FETs under various gate voltages ranging from 0 to 1.0 V in steps of 0.2 V. The intrinsic speed of the FETs is generally described by the performance metric of gate delay, defined as τ=CV/I, in which C is the total gate capacitance, V=Vds is the applied voltage, and I=Ion is the ON-state current30. Here, the semiconducting CNT channel has a diameter (d) of 1.8 nm, and the gate dielectric HfO2 thin film has a thickness (t) of 12 nm and an ɛr of 18; we thus obtain C=1.71 pF cm−1. The threshold voltage Vth is extracted from Figure 1b and c (using the peak transconductance method30), and found to be 0.05 V for the p-FET and 0.03 V for n-FET. By constructing a VDD (1.0 V) window, as illustrated in Figure 1b and c at Vth, we thus obtain Ion=10.6 μA for the p-FET and 10.4 μA for the n-FET at Vds=1.0 V. The intrinsic gate delay time of both the p-FET and n-FET with Lg=1 μm is approximately 16 ps, which is comparable to that of the silicon NMOS devices with Lg=0.5 μm. It should be noted that to obtain a suitable threshold voltage, Pd metal was used as the top gate, which effectively adjusted the threshold voltage of both the n-type and p-type FETs to centre it near 0 V for |Vds|=1 V (Fig. 1b and c). The high-performance and symmetric n-type and p-type CNT FETs with suitable threshold voltages thus provide the ideal building blocks for constructing CNT-based ICs, and in this work, all the circuits are designed and constructed to work with a single power supply providing VDD=1 V or 0.4 V.
CNT-based PTL circuits
A popular and widely used alternative to the conventional CMOS logic configuration is the PTL configuration, which can significantly reduce the number of transistors required to implement a logic circuit and has the additional advantage of lower capacitance27,28,29. Figure 2 illustrates the operating principles and experimental results for the PTL circuits using both p-type and n-type CNT FETs. For a p-type pass transistor (Fig. 2a and b), when a low voltage (a logic '0', or 0 V here) is applied to the gate (Fig. 2a), the resistance between the source (input) and drain (output) of the device, Rds, is on the order of 100 kΩ or less. The device is thus in its 'low-resistance' or 'ON' state, and may pass the input signal Vin from the source to the drain. When a high bias (a logic '1', that is, 1.0 V here) is applied to the gate (Fig. 2b), Rds is greater than 500 kΩ. The p-type device is thus in its 'high-resistance' or 'OFF' state and may not pass the input signal Vin to the output faithfully. The operation of an n-type pass transistor is similar to that of a p-type pass transistor, but in a complementary way. The n-type pass transistor can pass an input signal when a logic '1' is biased on the gate (Fig. 2c), and it is turned off when a logic '0' is biased on the gate (Fig. 2d). It should be noted that pass transistors are used here as switches to pass logic levels between the nodes of a circuit, rather than as switches connected directly to the power supply.
The main advantage of using PTL is that one pass transistor (either a p-type or an n-type) is sufficient to perform a logical operation, which greatly reduces the number of transistors used compared with a circuit using a conventional CMOS configuration to achieve the same function29. One major drawback in the Si-based PTL is that although an n-type pass transistor may produce a 'strong zero' or ground, it produces only a 'weak one' by lowering the output below VDD−Vthn, where Vthn is the threshold voltage of the n-FET. In contrast, a p-type pass transistor produces a 'strong one', but a 'weak zero' by raising the output above |Vthp| when the input is zero, where Vthp is the threshold voltage of the p-FET. This drawback results from different threshold voltages for n-type and p-type FETs, and the change in the output is usually referred to as threshold voltage drop27,28,29. One possible solution to this problem is to adjust the threshold voltages of both the n-type and p-type FETs, such that Vthn≈Vthp≈0 at the processing level via doping. However, this is usually not desirable in conventional Si CMOS technology29. By contrast, the threshold voltage is readily adjustable in doping-free CNT CMOS technology13,21. Supplementary Fig. S1 demonstrates that it is possible to move the threshold voltage of both n-type and p-type FETs to centre them at approximately 0 V by selecting a suitable gate metal, which significantly reduces the conventional threshold voltage in CNT FET-based PTL circuits. However, finite threshold voltage drops for both the n-type and p-type CNT FETs as pass transistors still exist, as implied in Figure 2. For a p-type FET (Fig. 2a), the output resistance for passing a logic '0' in its 'ON' state (the solid green line) is obviously larger than that for passing a logic '1' (the solid blue line). Therefore, there still exists a small threshold voltage drop for the p-type CNT FET when a logic '0' is passed, and the voltage drop is significantly lower when passing a logic '1'. Similarly, an n-type FET passes a logic '0' well, while passing a logic '1' with an obviously larger Rds or threshold drop at low bias (Fig. 2c). However, benefitting from the small threshold voltage near zero, the threshold voltage drops for both n-type and p-type CNT pass transistors are much smaller than their conventional silicon counterparts, which show threshold voltages that are typically ten times larger31. On the basis of these high-performance CNT pass transistors, many types of high-performance logic ICs can thus be designed and built with a PTL configuration.
Basic logic gates
We first consider the OR gate. Figure 3a is a circuit diagram designed with a PTL configuration together with a truth table for the OR gate. The outputs for all four (A, B) input combinations are shown in Fig. 3b, illustrating an excellent OR logic function. Among the four outputs, those corresponding to the input combinations (A, B)=(0, 0) and (1, 1) are almost perfect, whereas the outputs for the input combinations (A, B)=(0, 1) and (1, 0) are 0.96 V and 0.97 V, respectively, for a power supply of VDD=1 V, and are thus slightly degraded. The output voltage drop for each input combination depends mainly on the threshold voltages of the involved CNT FETs and can be estimated from the output characteristics of the device.
An AND gate circuit can be designed on the basis of the OR gate circuit, simply by exchanging the places of the n-FET and p-FET (Fig. 3c). The measured output voltages for all four input combinations are shown in Fig. 3d, illustrating an excellent AND logic function. It should be noted that there are two weak '0' state outputs: an output voltage of approximately 0.02 V for input combination (A, B)=(0, 1), and another one approximately 0.1 V for (A, B)=(1, 0).
It should also be noted that in Fig. 3, both the OR and AND gates are composed of pairs of one p-type and one n-type pass transistor connected to each other at one source/drain node and their common gate. Depending on the desired logic function, different types of connections can be applied to the nodes of the pass transistors. Regardless of its complexity, an IC can always be constructed on the basis of the pairs of connected p-type and n-type pass transistors. Therefore, we call our PTL circuits CMOS-based CNT–PTL circuits.
The main benefit of using the CMOS-based PTL circuits is that the number of transistors can be greatly reduced when compared with those based on conventional CMOS. For example, only two transistors are needed for both the OR and AND gates, whereas a total of six transistors are needed in the corresponding conventional CMOS circuit27,28. This savings in the use of transistors in ICs not only leads to higher efficiency per transistor and lower power dissipation, but also to higher speed due to the shorter signal path. Simultaneously, the performance of CMOS-based PTL circuits is not obviously degraded as a result of the small threshold voltage drop in CNT devices, because the threshold voltage of the CNT device has been suitably adjusted.
In principle, by combining a CMOS NOT gate (with the basic characteristics shown in Supplementary Fig. S2) with basic PTL gates (for example, OR and AND), we can build hybrid CMOS/PTL circuits of any desired complexity. We first examine a full-adder circuit, which is an important combinational circuit in the ALU of a modern digital computer. A full adder adds three inputs, A, B, and a carry Ci from a previous addition, and outputs a sum, SUM, and carry, Co. One way to construct a full adder is to use an exclusive-OR, or XOR, gate, which can be realised with only a pair of CMOS CNT FETs (Fig. 4a). A detailed analysis of all four input combinations results in a truth table (Fig. 4a) that is identical to that of an XOR gate. The measured output voltages for all four input combinations are presented in Figure 4b, in which the outputs of three combinations of (A, B)=(0, 1), (1, 0) and (1, 1) show an almost ideal high and low logic levels. A 1-bit full adder is constructed by integrating three pairs of CMOS-based pass transistors, and its equivalent circuit diagram is shown in Fig. 4c. The truth table of the circuit is shown in Figure 4d, which is identical to that of a full adder. The measured output voltages for all eight input combinations (A, B, C) are shown in Fig. 4e and f, in which the outputs SUM and C0 for all eight input combinations have similar output voltage ranges: 0–0.37 V for a logic '0' and 0.57–1 V for a logic '1', and thus match the truth table of Figure 4d. Therefore, a full adder is successfully realised experimentally on a single CNT. It is worth noting that only 6 transistors suffice to construct a 1-bit full adder with PTL, whereas a total of 28 transistors are required in a conventional CMOS circuit design. This difference represents savings of more than 78% in a transistor count, which significantly reduces the complexity of constructing a full-adder circuit. However, it should be noted that output voltages of some input combinations such as (A, B, C)=(0, 1, 0), (0, 1, 1) and (1, 0, 0) for SUM, and (A, B, C)=(0, 0, 1), (0, 1, 1), (1, 0, 0) and (1, 1, 0) for Co, are not as good as those for other outputs. The cause of this difference is the fact that the gain is less than 1 in all CMOS-based PTL gates, so signal degradation is unavoidable, owing to the intrinsic threshold voltage drop and fluctuations in the threshold voltages of the CNT FETs used in the circuit (Supplementary Fig. S1b shows that the threshold voltages range from −0.33 V to 0.01 for the p-FETs and from −0.14 V to 0.46 V for the n-FETs) that arise from process nonuniformity13,20; these voltages may be further magnified in multi-stage cascading gates.
The degraded output in multi-stage circuits can be restored to its ideal value by simply cascading a CMOS inverter with a gain larger than 1. As shown in Fig. 5a, when connecting a CMOS inverter to the output of a PTL XOR gate (or a semi-adder), the degraded output high level (at approximately 0.67 V) for the input combination (A, B)=(0, 1) from the XOR gate is converted to an almost ideal low level (approximately 0.02 V, Fig. 5b). Alternatively, the CMOS inverter can also be used to drive a PTL circuit such as the XOR gate, providing a performance similar to that using an ideal voltage source (Fig. 5c and d). Therefore, a CMOS inverter with a voltage gain much larger than 1 can be used in combination with PTL circuits to provide signal gain and restore the degraded signal, and to drive the next stage of the PTL gate, that is, the CNT-based PTL circuits can be used in combination with CMOS circuits to provide more reliable and complicated logic ICs without introducing any additional fabrication process.
MUX and DEMUX circuits are key components in memory and data manipulation circuits for digital ICs27. A two-to-one MUX circuit is designed with the CMOS-based PTL configuration, as shown in Fig. 6a, and the measured output voltages of the MUX circuit for all input combinations (S, A, B) are shown in Figure 6b. The truth table of the circuit, summarised in Figure 6c, is identical to that of a MUX. That is, A is selected as an output when S=0, whereas B is selected when S=1. The DEMUX circuit is the opposite of the MUX circuit, allowing the switching of an input to one of the many possible output lines. Figure 6d illustrates the design of a two-to-four DEMUX circuit, which consists of four AND gates connected in parallel. The DEMUX circuit works correctly, as shown in Figure 6f, in accordance with the truth table of Fig. 6e. In particular, the selected outputs from D0 to D3 show ideal logic '1' values without obvious degradation, and are thus competent to select and drive the next-stage circuit.
A latch is a circuit that has two stable states and can be made to change state by applying signals to one or more control inputs. Although it is not necessary for an ALU, a latch circuit is an important storage element in sequential logic units and thus in a central processing unit. Figure 7a presents the design of a D-latch circuit with a PTL configuration, and Fig. 7b presents the relevant output (Q) waveforms (red) and corresponding sets of clock (S, black) and data (D, blue) inputs. The output Q is seen to follow the input data D when the clock S is in logic state zero during the time intervals (0, 40 s), (80, 100 s) and (140, 180 s). However, the output Q retains its previous value when S is switched into logic state one during the intervals (40, 80 s) and (100, 140 s). It should be noted that the time response of this latch circuit is slow, on the order of tens of microseconds; this is due largely to the large RC delay induced by the large capacitance coupling between the measurement pads and the conducting substrate, and the intrinsically small current of a single CNT channel.
Discussion
It is well known that a good circuit configuration at the architectural level should take full advantage of the component device properties at the physical level. Here, we summarise the advantages of CNT-based PTL circuits. First, the number of transistors can be greatly reduced if a circuit with a desired function is designed with a PTL configuration when compared with that using the usual CMOS configuration. Reducing the number of transistors in an IC not only leads to higher efficiency per transistor, but also to higher speed and/or lower static power dissipation overall. Second, the major drawback of conventional Si-based PTL circuits—threshold voltage drop—is largely avoided in our CMOS-based CNT PTL circuits, because of the readily adjustable threshold voltage of the CNT FET. Moreover, benefitting from the near-zero threshold voltages of both the p- and n-type FETs, the power supply for these PTL circuits can be scaled down to as low as 0.4 V, even with devices having gate lengths as large as approximately 1.0 μm. The results in Fig. 8 demonstrate that the CNT-based PTL circuits such as OR (Fig. 8a and b) and AND (Fig. 8c and d) gates work properly at VDD=0.4 V (Fig. 8b and d). Third, although the signal gain is less than 1 in typical PTL circuits, CNT CMOS inverters with gains much greater than 1 can be cascaded at the outputs of CNT PTL circuits to provide signal amplification. In principle, CNT-based PTL/CMOS hybrid circuit configurations can be used to construct all types of complicated digital ICs, including sequential circuits such as the latch circuit shown in Fig. 7. Last, but importantly, PTL circuits present better immunity against fluctuations in the threshold voltages of the constituent devices than CMOS circuits (as detailed in the Methods section). In CMOS circuits, the power supply at VDD is applied to pair(s) of n- and p-type FETs, and it is required that VDD should be larger than the sum of the absolute values of Vth for both the p-FET and n-FET, that is, VDD>|Vthp|+|Vthn|. In PTL circuits, VDD is applied only on one FET (an n-type or a p-type), and VDD is thus only required to be larger than either Vthn (for the n-FET) or Vthp (for the p-FET). Therefore, the required power supply voltage in PTL circuits can be made much smaller than that in conventional CMOS circuits. For CNT-based PTL circuits, only a single power supply operating at VDD=1.0 or 0.4 V is required to power the entire circuit. Compared with other nano-ICs based on CNTs or nanowires requiring higher voltages or multiple power supplies17,18,19,21,22,23,24,25,26, our CMOS-based CNT PTL circuits offer a significant simplification of circuit design and reduced power dissipation.
Although the intrinsic speed of CNT-based circuits is expected to be very fast and may potentially surpass that of silicon CMOS circuits, because the CNT channel material has extremely high mobility11,13, experimentally, this high speed has not been realised owing to several parasitic effects17,18,19,20,21. These effects originate mainly from parasitic capacitances, which are further magnified by the well-known disadvantage of CNT FETs, that is, a small driving current when compared with that of conventional silicon devices. The major parasitic capacitances in CNT FETs include that between the gate electrode and the source/drain electrodes and that between the metallic parts (for example, contacts, interconnects and test pads) and the silicon substrate. These parasitic capacitances may in principle be significantly reduced by optimising the device structure15 and shrinking the contact width of the source and/or drain, or by adopting an array of aligned CNTs as the channel32. Moreover, the parasitic capacitance between the metallic parts and the silicon substrate can be completely eliminated when an insulating substrate such as quartz, glass or plastic is used to replace the silicon22,23,24.
The CNT-based, high-performance CMOS FETs are fabricated with a doping-free approach, in which threshold voltages for both the n- and p-type devices are adjusted to overlap near zero by selecting a suitable metal for the top gate. High-performance ICs are designed and realised with the PTL configuration, significantly reducing the number of transistors in these ICs compared with that of the conventional CMOS circuits. Combining the advantages of both the PTL configuration and the superb properties of the CNT CMOS devices, the major drawback of conventional Si-based PTL circuits—threshold voltage drop—is largely avoided, and the basic logic gates, including OR, AND and XOR, are realised with ideal high and low logic states. By incorporating a CMOS inverter with a gain much greater than one in the PTL circuits, PTL/CMOS hybrid circuits are constructed with signal gains that are not possible with pure PTL circuits, making it feasible to construct any type of complicated logic IC reliably. In addition, more complex functional units such as a full adder, and MUX and DEMUX circuits are successfully demonstrated on individual CNTs. The realisation of these circuits is sufficient for the construction of a nano-ALU.
Methods
Fabrication of the devices and circuits
Ultra-long SWCNTs were directionally grown on n-doped silicon wafers covered with a 500 nm, thermally grown SiO2 layer via catalytic chemical vapour deposition33. Semiconducting SWCNTs were identified and selected via field-effect measurements, using the substrate as the back gate. Source (S) and drain (D) electrodes for the p-FETs were first patterned and formed via electron beam lithography, followed by evaporating an 80-nm Pd film and a standard lift-off process. The gate window was then patterned via the electron beam lithography, and a 12-nm HfO2 film with a dielectric constant of approximately 18 was grown by atomic layer deposition at 90 °C, followed by the deposition of a 10-nm Pd film by e-beam evaporation. A standard lift-off process was used to form a self-aligned HfO2/Pd gate stack to complete the fabrication of the p-type CNT FETs. The fabrication of the n-FETs was similar to that of the p-FETs, but Sc was used instead of Pd for the S/D contacts. All of the FETs in this study were designed with a channel length of ∼1 μm. Finally, another bilayer of Ti/Au was patterned and used as interconnecting wires between the n-type and p-type FETs for external measurements. All devices and circuits were measured using a Keithley 4200 semiconductor analyser and signal sources through a probe station in air.
Threshold voltage engineering
As is widely known, the threshold voltage of a CNT FET is very difficult to control precisely21. The threshold voltage of an as-fabricated top-gate p-type CNT FET with a Ti-gate electrode is typically negative and is approximately −0.5 V (represented by the blue curves in Supplementary Fig. S1a), whereas that of an n-type CNT FET is slightly negative13. To realise a symmetric CMOS inverter with a low-voltage power supply, for example, VDD=1 V, threshold voltages for both the p-type and n-type CNT FETs must be shifted in the positive direction to centre them at approximately 0 V. We previously demonstrated13 that the threshold voltage of a CNT FET is proportional to the work function of the top gate metal, suggesting that the threshold voltage may be moved toward the more positive values by using metals with higher work functions. In this study, we used Pd as the top gate metal, which results in a reasonable threshold voltage distribution of approximately 0 V, as shown in Supplementary Fig. S1b. It should be noted that only one type of gate metal is used here. In principle, however, different metals may be used for the n- and p-FETs, which would result in overlapping threshold distributions near zero.
CMOS-based PTL circuit design
OR gate. The design of the OR gate is shown as an equivalent circuit in Figure 3a. Input A is applied to a p-type pass transistor, and input B is applied not only to the n-type pass transistor, but also to the common gate of the pair of pass transistors. When input B is a logic '1', which turns the n-type pass transistor on and the p-type transistor off, the output F is the same as B, which is a logic '1', regardless of the value of input A. When input B is a logic '0', which turns the n-type pass transistor off and the p-type transistor on, the output F is the same as input A.
AND gate. The design of the AND gate is shown as an equivalent circuit in Figure 3c. Input A is applied to an n-type pass transistor, and input B is applied not only to the p-type pass transistor, but also to the common gate of these two pass transistors. When input B is a logic '1', which turns the n-type pass transistor on and the p-type transistor off, output F is the same as input A. When input B is a logic '0', which turns the n-type pass transistor off and the p-type transistor on, the output F is the same as input B, which is a logic '0', regardless of the value of input A.
XOR gate. The XOR gate is very similar to the AND gate, but without a connection of the common gate of the two FETs to the source of the p-type pass transistor (Fig. 4a). When input B is a logic '1', which turns the n-type pass transistor on and the p-type transistor off, the output F is the same as input !A (the inverse of A). When input B is a logic '0', which turns the n-type pass transistor off and the p-type transistor on, the output F is the same as input A.
Full adder. The design of a full adder is shown as an equivalent circuit in Figure 4c. The output of the first stage (i=1) XOR logic, A B, is connected to the gate of the CMOS-based pair of pass transistors labelled (3, 3) to decide whether to pass input B (A also works here) or input C for a carry-out output, Co. When the XOR logic of A and B outputs a logic '0', there are two different possible cases: (A, B)=(0, 0) and (A, B)=(1, 1). The former may not produce a carry-out, whereas the latter must produce a carry-out. In other words, Co depends only on input A or B when the output of (A B) is 0, regardless of the value of input C. In the cases of (A, B)=(0, 1) and (A, B)=(1, 0), Co depends only on input C, because if C is a logic '1' ('0'), the carry-out is a logic '1' ('0'). In the circuit design of the full adder, there are two outputs, that is, SUM and Co, representing the sum-mation and the carry-out of the inputs A+B+C, respectively, with the logic relations SUM=A B C and Co=B (!(A B)) + C (A B). Although Co=B(!(A B))+C(A B) is complex and different from the common expression of Co=AB+BC+CA in form, their functions are equivalent.
Multiplexer. The MUX circuit is designed in the CMOS-based PTL configuration with only one pair of CMOS CNT FETs, as shown in Figure 6a. The control input S, which is applied to the common gate of the pass transistors, denotes the control input signal that decides which input is selected. When S is a logic '1', which turns the n-type pass transistor on and the p-type transistor off, the output F is the same as input B, regardless of the value of input A, that is, input B is selected to pass through. When input S is a logic '0', which turns the n-type pass transistor off and the p-type transistor on, input A is then selected to pass through to the output F.
Additional information
How to cite this article: Ding, L. et al. CMOS-based carbon nanotube pass-transistor logic integrated circuits. Nat. Commun. 3:677 doi: 10.1038/ncomms1682 (2012).
References
Avouris, P., Chen, Z. H. & Perebeinos, V. Carbon-based electronics. Nat. Nanotechnol. 2, 605–615 (2007).
Rutherglen, C., Jain, D. & Burke, P. Nanotube electronics for radiofrequency applications. Nat. Nanotechnol. 4, 811–819 (2009).
Burghard, M., Klauk, H. & Kern, K. Carbon-based field-effect transistors for nanoelectronics. Adv. Mater. 21, 2586–2600 (2009).
Heinze, S. et al. Carbon nanotubes as Schottky barrier transistors. Phys. Rev. Lett. 89, 106801 (2002).
Chen, Z., Appenzeller, J., Knoch, J., Lin, Y.- M. & Avouris, P. The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors. Nano Lett. 5, 1497–1502 (2005).
Perello, D. et al. Anomalous Schottky barriers and contact band-to-band tunnelling in carbon nanotube transistors. ACS Nano 4, 3103–3108 (2010).
Zhou, X. J., Park, J. Y., Huang, S. M., Liu, J. & McEuen, P. L. Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors. Phys. Rev. Lett. 95, 146805 (2005).
Franklin, A. D. & Chen, Z. Length scaling of carbon nanotube transistors. Nat. Nanotechnol. 5, 858–862 (2010).
Javey, A., Guo, J., Wang, Q., Lundstrom, M. & Dai, H. J. Ballistic carbon nanotube field-effect transistor. Nature 424, 654–657 (2003).
Javey, A. et al. Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics. Nano Lett. 4, 447–450 (2004).
Javey, A. et al. Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays. Nano Lett. 4, 1319–1322 (2004).
Zhang, Z. Y. et al. Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits. Nano Lett. 7, 3603–3607 (2007).
Zhang, Z. Y. et al. Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage. Nano Lett. 8, 3696–3701 (2008).
Ding, L. et al. Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with sc-contacted devices. Nano Lett. 9, 4209–4214 (2009).
Ding, L. et al. A self-aligned u-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain induced barrier lowering. ACS Nano 5, 2512–2519 (2011).
Wang, Z. X. et al. Yttrium oxide as a perfect high-κ gate dielectric for carbon-based electronics. Nano Lett. 10, 2024–2030 (2010).
Javey, A. et al. Carbon nanotube transistor arrays for multistage complementary logic and ring oscillators. Nano Lett. 2, 929–932 (2002).
Derycke, V., Martel, R., Appenzeller, J. & Avouris, P. Carbon nanotube inter- and intramolecular logic gates. Nano Lett. 1, 453–456 (2001).
Bachtold, A. et al. Logic circuits with carbon nanotube transistors. Science 294, 1317–1320 (2001).
Zhang, Z. Y. et al. Almost perfectly symmetric SWCNT-based CMOS devices and scaling. ACS Nano 3, 3781–3187 (2009).
Chen, Z. et al. An integrated logic circuit assembled on a single carbon nanotube. Science 311, 1735 (2006).
Ryu, K. M. et al. CMOS-analogous wafer-scale nanotube-on-insulator approach for submicrometer devices and integrated circuits using aligned nanotubes. Nano Lett. 9, 189–197 (2009).
Sun, D. M. et al. Flexible high-performance carbon nanotube integrated circuits. Nat. Nanotechnol. 6, 156–161 (2011).
Cao, Q. et al. Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates. Nature 454, 495–500 (2008).
Yu, W. J. et al. Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors. Nano Lett. 9, 1401–1405 (2009).
Yan, H. et al. Programmable nanowire circuits for nanoprocessors. Nature 470, 240–244 (2011).
Rabaey, J. M., Chandrakasan, A. & Nikolic, B. Digital Integrated Circuits (Prentice Hall, 2003).
Weste, N. H. E. & Harris, D. CMOS VLSI Design: A Circuits and System Perspective 3rd edn, (Addison Wesley, 2004).
Zimmermann, R. & Fichtner, W. Low-power logic styles: CMOS versus pass-transistor logic. IEEE J. Solid-State Circuits 32, 1079–1090 (1997).
Chao, R. et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Trans. Nanotechnol. 4, 153–158 (2005).
Sze, S. Physics of Semiconductor Devices (Wiley, 1981).
Guo, J. et al. Assessment of high-frequency performance potential of carbon nanotube transistors. IEEE Trans. Nanotechnol. 4, 715–721 (2005).
Zhou, W. W. et al. Copper catalyzing growth of single-walled carbon nanotubes on substrates. Nano Lett. 6, 2987–2990 (2006).
Acknowledgements
We would like to thank Professor Xu Cheng for valuable discussions on the pass-transistor logic. This work was supported by the Ministry of Science and Technology of China (Grant Numbers 2011CB933001 and 2011CB933002), the National Science Foundation of China (Grant Numbers 61071013 and 61001016), and the Fundamental Research Funds for the Central Universities.
Author information
Authors and Affiliations
Contributions
Z. Z. and L. M. P. proposed and supervised the project, L. M. P. and Z. Z. designed the experiment, L. D. and Z. Z. designed the PTL ICs, and L. D. and S. L. performed device fabrication and characterisation. W. Z., Y. L and J. L. performed the nanotube growth. Z. Z., L. M. P. and L. D. analysed the data and co-wrote the manuscript. All authors discussed the results and commented on the manuscript.
Corresponding author
Ethics declarations
Competing interests
The authors declare no competing financial interests.
Supplementary information
Supplementary Information
Supplementary Figures S1-S2, and Supplementary Note (PDF 49 kb)
Rights and permissions
This work is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/3.0/
About this article
Cite this article
Ding, L., Zhang, Z., Liang, S. et al. CMOS-based carbon nanotube pass-transistor logic integrated circuits. Nat Commun 3, 677 (2012). https://doi.org/10.1038/ncomms1682
Received:
Accepted:
Published:
DOI: https://doi.org/10.1038/ncomms1682
This article is cited by
-
Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing
Nature Electronics (2024)
-
Kinetics and mechanism of the sulfurization behavior of silver conductive material in automobile industry
Rare Metals (2022)
-
Inkjet-printed low-dimensional materials-based complementary electronic circuits on paper
npj 2D Materials and Applications (2021)
-
Carbon nanotube transistor technology for More-Moore scaling
Nano Research (2021)
-
Mechanical force-induced assembly of one-dimensional nanomaterials
Nano Research (2020)
Comments
By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.