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Ion implantation

Naturevolume 256pages701705 (1975) | Download Citation

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Abstract

Ion implantation has proved an elegant and successful technique, and in the manufacture of silicon devices, is now being extended both for research and practical applications in other materials, such as metals.

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References

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    Dearnaley, G., Freeman, J. H., Nelson, R. S., and Stephen, J., Ion Implantation, Ch. 2 (North-Holland, Amsterdam, 1973).

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    Seidel, T. F., Meek, R. L., and Cullis, A. G., Proc. Int. Conf. on Lattice Defects in Semiconductors (Institute of Physics, London, in the press).

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    Amelio, G. F., Proc. Conf. on Charge-coupled Devices (University of Edinburgh Press, Edinburgh, 1974).

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    Woodcock, J. M., Shannon, J. M., and Clark, D. J., Sol. State Electronics, 18, 267 (1975).

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    Freeman, J. H., et al., Proc. Int. Conf. on Ion Implantation in Semiconductors and Other Materials, Osaka 1974 (in the press).

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    Dearnaley, G., Proc. Conf. on Applications of Ion Beams to Metals, 63 (Plenum Press, New York, 1974).

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    Antill, J. E., Bennett, M. J., Dearnaley, G., Fern, F., Goode, P. D., and Turner, J. F., Proc. Conf. on Ion Implantation in Semiconductors and Other Materials, 415 (Plenum, New York, 1974).

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Affiliations

  1. Atomic Energy Research Establishment, Harwell, Oxfordshire, OX11 0RA, UK

    • G. Dearnaley

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https://doi.org/10.1038/256701a0

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