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Electrically assisted amplified spontaneous emission in perovskite light-emitting diodes
Electrically injected charges can effectively contribute to optical gain in perovskite light-emitting diodes under optical and electrical co-excitation.
- Karim Elkhouly
- , Iakov Goldberg
- & Paul Heremans
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Article |
Widely tunable and narrow-linewidth chip-scale lasers from near-ultraviolet to near-infrared wavelengths
A chip-scale laser platform based on silicon nitride ring resonators and commercial Fabry–Pérot laser diodes is developed for the wavelength range from 404 nm to 785 nm. The achieved coarse and fine tunings are up to 12.5 nm and 33.9 GHz, respectively, with kilohertz-scale linewidths and side-mode suppression ratios above 35 dB.
- Mateus Corato-Zanarella
- , Andres Gil-Molina
- & Michal Lipson
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Article |
Integrated passive nonlinear optical isolators
The intrinsic Kerr nonlinearity in ring resonators is exploited to demonstrate passive isolation of a continuous-wave laser. Up to 35-dB isolation with 5-dB insertion loss was achieved on-chip.
- Alexander D. White
- , Geun Ho Ahn
- & Jelena Vučković
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Article |
Room-temperature continuous-wave indirect-bandgap transition lasing in an ultra-thin WS2 disk
Indirect-bandgap transition lasing, even under continuous-wave excitation at room temperature, is demonstrated in an ultra-thin WS2 disk.
- Junghyun Sung
- , Dongjin Shin
- & Su-Hyun Gong
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Letter |
Topological-cavity surface-emitting laser
Researchers demonstrate a topological-cavity surface-emitting laser with a 10 W peak power and sub-degree beam divergence at 1,550 nm wavelength. The system is also capable of multiple-wavelength arrays.
- Lechen Yang
- , Guangrui Li
- & Ling Lu
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Review Article |
Landau level laser
Progress on Landau level lasers—based on external magnetic field splitting of electronic states—is reviewed, with particular attention paid to the potential for tunable terahertz lasers.
- Erich Gornik
- , Gottfried Strasser
- & Karl Unterrainer
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Letter |
Solution-processed PbS quantum dot infrared laser with room-temperature tunable emission in the optical telecommunications window
Solution-processed infrared lasers that operate at room temperature are a challenge, but now researchers have achieved such a device using colloidal quantum dots.
- G. L. Whitworth
- , M. Dalmases
- & G. Konstantatos
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Article |
Ultra-coherent Fano laser based on a bound state in the continuum
Quantum noise is suppressed by a bound state in the continuum (BIC) approach, enabling a microlaser with narrow linewidth compared to other small lasers.
- Yi Yu
- , Aurimas Sakanas
- & Jesper Mørk
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Article |
Room-temperature polaritonic non-Hermitian system with single microcavity
Researchers coupled exciton–polariton modes to one another in a six-fold symmetric microcavity with loss manipulation and observed room-temperature polaritonic parity-time-reversal symmetry.
- Hyun Gyu Song
- , Minho Choi
- & Yong-Hoon Cho
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Article |
Photonic-crystal lasers with two-dimensionally arranged gain and loss sections for high-peak-power short-pulse operation
By using engineered gain and loss sections in a photonic crystal laser, pulses with a peak power of ~20 W and pulse width of ~35 ps have been experimentally demonstrated and even higher peak power operation (>300 W) has been theoretically predicted.
- Ryohei Morita
- , Takuya Inoue
- & Susumu Noda
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Article |
Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators
Using CMOS-ready ultra-high-Q microresonators, a highly coherent electrically pumped integrated laser with frequency noise of 0.2 Hz2 Hz−1, corresponding to a short-term linewidth of 1.2 Hz, is demonstrated. The device configuration is also found to relieve the dispersion requirements for microcomb generation that have limited certain nonlinear platforms.
- Warren Jin
- , Qi-Fan Yang
- & John E. Bowers
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News & Views |
Designs break bandwidth record
Two independent reports of directly modulated lasers with bandwidths of >60 GHz may help bring data rates beyond 200 Gb s–1 to low-cost optical communication systems. Key to the successes has been managing photonic feedback effects within the laser cavities.
- Ute Troppenz
- & Jochen Kreissl
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Article |
Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate
Directly modulated membrane distributed reflector lasers are fabricated on a silicon carbide platform. The 3 dB bandwidth, four-level pulse-amplitude modulation speed and operating energy for transmitting one bit are 108 GHz, 256 Gbit s−1 and 475 fJ, respectively.
- Suguru Yamaoka
- , Nikolaos-Panteleimon Diamantopoulos
- & Shinji Matsuo
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Article |
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Continuous-wave lasing in strained GeSn alloys is reported at temperatures of up to 100 K. The approach offers a route towards a group-IV-on-silicon laser.
- Anas Elbaz
- , Dan Buca
- & Moustafa El Kurdi
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News & Views |
A wavelength-size tunable Fabry–Pérot laser
A wavelength-size laser cavity with a movable end mirror enables single-mode operation and 25% fractional tuning of a terahertz quantum cascade laser.
- Nathan Jukam
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Letter |
Broadband continuous single-mode tuning of a short-cavity quantum-cascade VECSEL
Terahertz quantum-cascade lasers with over 20% continuous fractional tuning of a single laser mode are now possible thanks to metasurfaces.
- Christopher A. Curwen
- , John L. Reno
- & Benjamin S. Williams
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Article |
Wavelength-encoded laser particles for massively multiplexed cell tagging
Intracellular laser particles based on silica-coated semiconductor microcavities with distinct emission wavelengths allow real-time tracking of thousands of cells in a tumour model.
- Nicola Martino
- , Sheldon J. J. Kwok
- & Seok-Hyun Yun
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Letter |
Taming of random lasers
It is possible to regulate random lasers by controlling and manipulating their properties, including the number and spatial positions of their lasing modes, and the lasing wavelength and the modal size over wide ranges. Performances comparable with non-random optical cavities with 2D photonic crystals are reported.
- Myungjae Lee
- , Ségolène Callard
- & Heonsu Jeon
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Article |
Optically controlling the emission chirality of microlasers
Based on optically breaking time-reversal symmetry by spin polarizing a gain medium with a circularly polarized optical pump, an integrated scheme for controlling the chirality of orbital angular momentum lasing is demonstrated.
- N. Carlon Zambon
- , P. St-Jean
- & J. Bloch
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Article |
Phase-locked photonic wire lasers by π coupling
Five wire lasers are phase-locked by a strong coupling and form a coupled cavity. The lasing frequency is around 3.8 THz and is continuously tunable by 10 GHz. A continuous-wave output power of 50–90 mW and beam divergence of ∼10° are achieved.
- Ali Khalatpour
- , John L. Reno
- & Qing Hu
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News & Views |
Embracing instability
The study of the complex, unstable dynamics of lasers is not just of scientific value but is also creating new opportunities for making secure lidar and generating high-frequency microwave signals.
- Oliver Graydon
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Letter |
Continuous-wave lasing in an organic–inorganic lead halide perovskite semiconductor
Optically pumped continuous-wave lasing is achieved in methylammonium lead iodide (MAPbI3) distributed feedback lasers that are maintained below the MAPbI3 tetragonal-to-orthorhombic phase transition temperature of 160 K.
- Yufei Jia
- , Ross A. Kerner
- & Noel C. Giebink
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Article |
Lasing in topological edge states of a one-dimensional
lattice
Topologically protected lasing is reported in a lattice of polariton micropillars.
- P. St-Jean
- , V. Goblot
- & A. Amo
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Letter |
Demonstration of a self-pulsing photonic crystal Fano laser
Fano interference and nonlinearity are exploited to achieve self-pulsing of a laser at gigahertz frequencies.
- Yi Yu
- , Weiqi Xue
- & Jesper Mork
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Article |
Lasing and anti-lasing in a single cavity
A cavity that can switch between lasing and anti-lasing could inspire a new design of optical modulator.
- Zi Jing Wong
- , Ye-Long Xu
- & Xiang Zhang
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Letter |
Integrated finely tunable microring laser on silicon
Finely tunable microring laser exploits integrated capacitive structure.
- D. Liang
- , X. Huang
- & R. G. Beausoleil
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Letter |
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
The fabrication of a blue–violet semiconductor laser on a silicon substrate enhances the integration of optoelectronics with electronics.
- Yi Sun
- , Kun Zhou
- & Hui Yang
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Review Article |
Perovskite photonic sources
The prospects for light-emitting diodes and lasers based on perovskite materials are reviewed.
- Brandon R. Sutherland
- & Edward H. Sargent
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Letter |
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
The growth of III–V quantum dot lasers directly onto a silicon substrate aids photonics and electronics integration.
- Siming Chen
- , Wei Li
- & Huiyun Liu
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News & Views |
The bio-mission of diode lasers
Diode lasers represent a viable alternative to light sources used in many biomedical applications. Their ongoing development will further increase their importance, offering not only multiple wavelength ranges, but also higher power levels.
- Rachel Won
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Article |
Room-temperature InP distributed feedback laser array directly grown on silicon
Scientists demonstrate an optically pumped InP-based distributed feedback laser array monolithically grown on (001)-silicon operating at room temperature that is suitable for wavelength-division multiplexing applications.
- Zhechao Wang
- , Bin Tian
- & Dries Van Thourhout
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Letter |
Monolayer excitonic laser
A laser is made from the two-dimensional material WS2 by embedding it into a microdisk resonator.
- Yu Ye
- , Zi Jing Wong
- & Xiang Zhang
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Letter |
Room-temperature lasing in a single nanowire with quantum dots
The room-temperature lasing of a single nanowire containing 50 quantum dots is demonstrated, paving the way towards ultrasmall lasers with extremely low power consumption for integrated photonic systems.
- Jun Tatebayashi
- , Satoshi Kako
- & Yasuhiko Arakawa
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News & Views |
The rise of the GeSn laser
The development of a group IV semiconductor laser that is CMOS-compatible represents a step towards the creation of fully integrated electronic and photonic circuitry.
- Kevin P. Homewood
- & Manon A. Lourenço
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Letter |
Lasing in direct-bandgap GeSn alloy grown on Si
Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.
- S. Wirths
- , R. Geiger
- & D. Grützmacher
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Comparative analysis of spasers, vertical-cavity surface-emitting lasers and surface-plasmon-emitting diodes
Theoretical analysis reveals that spasers do not differ fundamentally from conventional semiconductor lasers; differences are mainly technical and result from loss in the metal. Spasers are shown to have significantly inferior threshold currents and linewidths to those of vertical-cavity surface-emitting lasers, but their speed can be slightly greater.
- Jacob B. Khurgin
- & Greg Sun
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Article |
Watt-class high-power, high-beam-quality photonic-crystal lasers
Researchers demonstrate a watt-class high-power, single-mode photonic-crystal laser operating continuously at room temperature. A beam quality of M2 ≤ 1.1 is achieved.
- Kazuyoshi Hirose
- , Yong Liang
- & Susumu Noda
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Interview |
Warming up
Room-temperature, optically pumped GaAs/AlGaAs/GaAs nanowire lasers have been realized. Dhruv Saxena and Sudha Mokkapati from the Australian National University discuss this breakthrough.
- David Pile
Turnkey locking of quantum-dot lasers directly grown on Si
Photonic bound states
Semiconductor tube laser rolls out