Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • News & Views
  • Published:

Quantum bits

Better than excellent

Nature Materials volume 9, pages 468–469 (2010)Cite this article

Subjects

Nitrogen-vacancy centres in diamond are very promising candidates for quantum information processing in the solid state. However, a search to find defects with even more potential has now been launched.

This is a preview of subscription content, access via your institution

Access options

Buy this article

  • Purchase on Springer Link
  • Instant access to full article PDF
Buy now

Prices may be subject to local taxes which are calculated during checkout

Figure 1: Atomic structure and ground-state orbital of a charged NV centre in the 4H polytope of SiC.
Figure 2: Energy surfaces of ground- and excited-state manifolds of the singly charged NV centres in diamond and in 4H–SiC.

References

  1. Lukin, M. D. & Haemmer, P. R. Phys. Rev. Lett. 84, 2818–2821 (2000).

    Article  CAS  Google Scholar 

  2. Wrachtrup, J. & Jelezko, F. J. Phys. Condens. Matter 18, S807–S824 (2006).

    Article  CAS  Google Scholar 

  3. Jelezko, F. & Wrachtrup, J. Phys. Status Solidi A 203, 3207–3225 (2006).

    Article  CAS  Google Scholar 

  4. Kurtsiefer, C., Mayer, S., Zarda, P. & Weinfurter, H. Phys Rev. Lett. 85, 290–293 (2000).

    Article  CAS  Google Scholar 

  5. Charnock, F. T. & Kennedy, T. A. Phys. Rev. B 64, 041201 (2001).

    Article  Google Scholar 

  6. Wrachtrup, J., Kilin, S. Y. & Nizovtsev, A. P. Opt. Spectrosc. 91, 429–437 (2001).

    Article  CAS  Google Scholar 

  7. Jelezko, F. et al. Phys. Rev. Lett. 93, 130501 (2004).

    Article  CAS  Google Scholar 

  8. Weber, J. R. et al. Proc. Natl Acad. Sci. USA 10.1073/pnas.1003052107 (2010).

  9. Hanson, R., Dobrovitski, V. V., Feiguin, A. E., Gywat, O. & Awschalom, D. D. Science 320, 352–355 (2008).

    Article  CAS  Google Scholar 

  10. Hanson, R., Mendoza, F. M., Epstein, R. J. & Awschalom, D. D. Phys. Rev. Lett. 97, 087601 (2006).

    Article  CAS  Google Scholar 

  11. Tamarat, Ph. et al. New J. Phys. 10, 045004 (2008).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. David DiVincenzo is at the IBM Watson Research Center, PO Box 218, Yorktown Heights, New York 10598, USA. divince@watson.ibm.com,

    David DiVincenzo

Authors
  1. David DiVincenzo
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

DiVincenzo, D. Better than excellent. Nature Mater 9, 468–469 (2010). https://doi.org/10.1038/nmat2774

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1038/nmat2774

This article is cited by

Search

Advanced search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing