Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • News & Views
  • Published:

Oxide electronics

Interface takes charge over Si

Nature Materials volume 10, pages 168–169 (2011)Cite this article

Subjects

The formation of a two-dimensional electron liquid at the interface between two insulating oxides, now extended to oxides on Si, joins a wealth of observations that reveal how electron transfer between layers is responsible for this unusual effect.

This is a preview of subscription content, access via your institution

Relevant articles

Open Access articles citing this article.

Access options

Buy this article

  • Purchase on Springer Link
  • Instant access to full article PDF
Buy now

Prices may be subject to local taxes which are calculated during checkout

Figure 1: Subtle differences between LaAlO3/SrTiO3 interfaces result in just one type of interface exhibiting interfacial conductivity.

References

  1. Park, J. W. et al. Nature Commun. 1, 94 (2010).

    Article  CAS  Google Scholar 

  2. Cen, C. et al. Nature Mater. 7, 298–302 (2008).

    Article  CAS  Google Scholar 

  3. Ohtomo, A. & Hwang, H. Y. Nature 427, 423–426 (2004).

    Article  CAS  Google Scholar 

  4. Schneider, C. W., Thiel, S., Hammerl, G., Richter, C. & Mannhart, J. Appl. Phys. Lett. 89, 122101 (2006).

    Article  Google Scholar 

  5. Nakagawa, N., Hwang, H. Y. & Muller, D. A. Nature Mater. 5, 204–209 (2006).

    Article  CAS  Google Scholar 

  6. Mannhart, J. & Schlom, D. G. Science 327, 1607–1611 (2010).

    Article  CAS  Google Scholar 

  7. Pavlenko, N. & Kopp, T. Preprint at http://arXiv.org/abs/0901.4610 (2010).

  8. Eckstein, J. N. Nature Mater. 6, 473–474 (2007).

    Article  CAS  Google Scholar 

  9. Shibuya, K., Ohnishi, T., Lippmaa, M. & Oshima, M. Appl. Phys. Lett. 91, 232106 (2007).

    Article  Google Scholar 

  10. Thiel, S., Hammerl, G., Schmehl, A., Schneider, C. W. & Mannhart, J. Science 313, 1942–1945 (2006).

    Article  CAS  Google Scholar 

  11. Willmot, P. R. et al. Phys. Rev. Lett. 99, 155502 (2007).

    Article  Google Scholar 

  12. Singh-Bhalla, G. et al. Nature Phys. 7, 80–86 (2011).

    Article  CAS  Google Scholar 

  13. Breitschaft, M. et al. Phys. Rev. B 81, 153414 (2010).

    Article  Google Scholar 

  14. Pauli, S. A. et al. Phys. Rev. Lett. 106, 036101 (2011).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Darrell G. Schlom is in the Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA,

    Darrell G. Schlom

  2. Jochen Mannhart is at the Center for Electronic Correlations and Magnetism, University of Augsburg, 86135 Augsburg, Germany.,

    Jochen Mannhart

Authors
  1. Darrell G. Schlom
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jochen Mannhart
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Darrell G. Schlom.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Schlom, D., Mannhart, J. Interface takes charge over Si. Nature Mater 10, 168–169 (2011). https://doi.org/10.1038/nmat2965

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1038/nmat2965

Search

Advanced search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing