Transistors based on two-dimensional semiconductors suffer from electrical instabilities because charges readily get trapped in the gate oxides. As charge trapping is sensitive to the energetic alignment of the channel Fermi level to the defect bands in the oxide, the number of electrically active traps can be reduced by tuning the channel Fermi level.
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References
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This is a summary of: Knobloch, T. et al. Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. Nat. Electron. https://doi.org/10.1038/s41928-022-00768-0 (2022).
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Enhancing the electrical stability of two-dimensional transistors. Nat Electron 5, 329–330 (2022). https://doi.org/10.1038/s41928-022-00769-z
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DOI: https://doi.org/10.1038/s41928-022-00769-z
