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TWO-DIMENSIONAL MATERIALS

Ultrathin dielectrics for 2D devices

Nature Electronics volume 2, pages 559–560 (2019)Cite this article

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Gate dielectrics with an equivalent oxide thickness of only one nanometre can be grown on two-dimensional semiconductors with the help of a monolayer molecular crystal.

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Fig. 1: The dielectric–semiconductor interface in silicon-based and 2D devices.

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Authors and Affiliations

  1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, China

    Zhengdao Xie & Lei Liao

  2. Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Material Science, Henan Normal University, Xinxiang, China

    Yufang Liu

Authors
  1. Zhengdao Xie
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  2. Yufang Liu
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  3. Lei Liao
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Correspondence to Yufang Liu or Lei Liao.

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Xie, Z., Liu, Y. & Liao, L. Ultrathin dielectrics for 2D devices. Nat Electron 2, 559–560 (2019). https://doi.org/10.1038/s41928-019-0344-9

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