Abstract
Van der Waals layered transition metal dichalcogenides can exist in many different atomic and electronic phases. Such diverse polymorphisms not only provide a route for investigating novel topological states, such as quantum spin Hall insulators, superconductors and Weyl semimetals, but may also have applications in fields ranging from electronic and optical/quantum devices to electrochemical catalysis. And the methods for triggering robust phase transitions between polymorphs are evolving and diversifying—several growth processes, high-pressure/strain methods, and optical, electronic and chemical treatments have been developed. Here, we discuss recent progress on phase transitions and the related physics in layered materials, and demonstrate unique features compared with conventional solid-state materials.
This is a preview of subscription content, access via your institution
Access options
Access Nature and 54 other Nature Portfolio journals
Get Nature+, our best-value online-access subscription
$29.99 / 30 days
cancel any time
Subscribe to this journal
Receive 12 print issues and online access
$209.00 per year
only $17.42 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
Similar content being viewed by others
Change history
10 November 2017
In the version of this Progress Article originally published, one of the t2g states in Fig. 2a was missing; there should have been three. This has now been corrected.
References
Wilson, J. A., Di Salvo, F. J. & Mahajan, S. Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides. Adv. Phys. 24, 117–201 (1975).
Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).
Kappera, R. et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 13, 1128–1134 (2014).
Keum, D. H. et al. Bandgap opening in few-layered monoclinic MoTe2 . Nat. Phys. 11, 482–486 (2015).
Cho, S. et al. Phase patterning for ohmic homojunction contact in MoTe2 . Science 349, 625–628 (2015).
Qian, X., Liu, J., Fu, L. & Li, J. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. Science 346, 1344–1347 (2014).
Choe, D.-H., Sung, H.-J. & Chang, K. J. Understanding topological phase transition in monolayer transition metal dichalcogenides. Phys. Rev. B 83, 125109 (2016).
Liu, J., Wang, H., Fang, C., Fu, L. & Qian, X. van der Waals stacking-induced topological phase transition in layered ternary transition metal chalcogenides. Nano Lett. 17, 467–475 (2017).
Fei, Z. et al. Edge conduction in monolayer WTe2 . Nat. Phys. http://dx.doi.org/10.1038/nphys4091 (2017).
Saito, Y. et al. Superconductivity protected by spin-valley locking in ion-gated MoS2 . Nat. Phys. 12, 144–149 (2015).
Lu, J. M. et al. Evidence for two-dimensional Ising superconductivity in gated MoS2 . Science 350, 1353–1357 (2015).
Duerloo, K.-A. N., Li, Y. & Reed, E. J. Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers. Nat. Commun. 5, 4214 (2014).
Voiry, D. et al. The role of electronic coupling between substrate and 2D MoS2 nanosheets in electrocatalytic production of hydrogen. Nat. Mater. 15, 1003–1009 (2016).
Sun, Y., Wu, S.-C., Ali, M. N., Felser, C. & Yan, B. Prediction of Weyl semimetal in orthorhombic MoTe2 . Phys. Rev. B 92, 161107(R) (2015).
Li, W. & Li, J. Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers. Nat. Commun. 7, 10843 (2016).
Kan, M. et al. Structures and phase transition of a MoS2 monolayer. J. Phys. Chem. C 118, 1515–1522 (2014).
Xi, X. et al. Strongly enhanced charge-density-wave order in monolayer NbSe2 . Nat. Nanotech. 10, 765–769 (2015).
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
Qi, Y. et al. Superconductivity in Weyl semimetal candidate MoTe2 . Nat. Commun. 7, 11038 (2016).
Kane, C. L. & Mele, E. J. Quantum spin Hall effect in graphene. Phys. Rev. Lett. 95, 226801 (2005).
König, M. et al. Quantum spin Hall insulator state in HgTe quantum wells. Science 318, 766–770 (2007).
Song, S. et al. Room temperature semiconductor-metal transition of MoTe2 thin films engineered by strain. Nano Lett. 16, 188–193 (2016).
Lin, Y.-C., Dumcenco, D. O., Huang, Y.-S. & Suenaga, K. Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 . Nat. Nanotech. 9, 391–396 (2014).
Guo, Y. et al. Probing the dynamics of the metallic-to-semiconducting structural phase transformation in MoS2 crystals. Nano Lett. 15, 5081–5088 (2015).
Kang, Y. et al. Plasmonic hot electron induced structural phase transition in a MoS2 monolayer. Adv. Mater. 26, 6467–6471 (2014).
Kolobov, A. V., Fons, P. & Tominaga, J. Electronic excitation-induced semiconductor-to-metal transition in monolayer MoTe2 . Phys. Rev. B 94, 094114 (2016).
Kim, S. et al. Post-patterning of an electronic homojunction in atomically thin monoclinic MoTe2 . 2D Mater. 4, 024004 (2017).
Seok, J. et al. Active hydrogen evolution through lattice distortion in metallic MoTe2 . 2D Mater. 4, 025061 (2017).
Chen, X. et al. Probing the electron states and metal–insulator transition mechanisms in molybdenum disulphide vertical heterostructures. Nat. Commun. 6, 6088 (2015).
Das Sarma, S. Two-dimensional metal–insulator transition as a percolation transition in a high-mobility electron system. Phys. Rev. Lett. 94, 136401 (2005).
Popovic, D., Fowler, A. B. & Washburn, S. Metal–insulator transition in two dimensions: effects of disorder and magnetic field. Phys. Rev. Lett. 79, 1543–1546 (1997).
Pradhan, N. R. et al. Metal to insulator quantum-phase transition in few-layered ReS2 . Nano Lett. 15, 8377–8384 (2015).
Wong, H.-S. et al. Phase change memory. Proc. IEEE 98, 2201–2227 (2010).
Park, J. C. et al. Phase-engineered synthesis of centimeter-scale 1T’- and 2H- molybdenum ditelluride thin films. ACS Nano 9, 6548–6554 (2015).
Zhou, L. et al. Large-area synthesis of high-quality uniform few-layer MoTe2 . J. Am. Chem. Soc. 137, 11892–11895 (2015).
Chae, S. H. et al. Oxidation effect in octahedral hafnium disulfide thin film. ACS Nano 10, 1309–1316 (2016).
Acknowledgements
H.Y. acknowledges support from the National Research Foundation of Korea (NRF) under grant no. NRF-2017R1A2B2008366. S.W.K. acknowledges support from the Creative Materials Discovery Program through the NRF funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070639). Y.H.L. acknowledges support from the Institute for Basic Science (IBS-R011-D1).
Author information
Authors and Affiliations
Corresponding authors
Ethics declarations
Competing interests
The authors declare no competing financial interests.
Rights and permissions
About this article
Cite this article
Yang, H., Kim, S., Chhowalla, M. et al. Structural and quantum-state phase transitions in van der Waals layered materials. Nature Phys 13, 931–937 (2017). https://doi.org/10.1038/nphys4188
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1038/nphys4188
This article is cited by
-
Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2
Nature Communications (2024)
-
Crystalline-amorphization-recrystallization structural transition and emergent superconductivity in van der Waals semiconductor SiP under compression
Science China Physics, Mechanics & Astronomy (2024)
-
Dynamic topological domain walls driven by lithium intercalation in graphene
Nature Nanotechnology (2023)
-
Genetic descriptor search algorithm for predicting hydrogen adsorption free energy of 2D material
Scientific Reports (2023)
-
Synthesis of atomically thin sheets by the intercalation-based exfoliation of layered materials
Nature Synthesis (2023)