Semiconductors articles within Nature Communications

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  • Article |

    Organic electronic materials are promising candidates for applications in which flexible electronic devices are required. Yiet al. demonstrate a high-performance, flexible organic transistor based on solution-processed small molecules that can be fabricated with a simple, low-cost process.

    • Hee Taek Yi
    • , Marcia M. Payne
    •  & Vitaly Podzorov

  • Article |

    Polariton condensates provide an arena in which to study interesting non-equilibrium condensate dynamics. Tosi et al. generate stable vortex lattices in a polariton condensate and study their macroscopic wavefunction, uncovering a nonlinear regime for topological defects at high densities.

    • G. Tosi
    • , G. Christmann
    •  & J.J. Baumberg

  • Article |

    Understanding charge transport and the fundamental limits on conductivity in polymer semiconductors is important for improving device performance. Wanget al. report a transport regime close to band-like conduction and the observation of the Hall effect in an electrochemically-doped polymer semiconductor.

    • Shun Wang
    • , Mingjing Ha
    •  & C Leighton

  • Article
    | Open Access

    Achieving spin separation of charged particles in non-uniform magnetic fields is hindered by the Lorentz force. Kohdaet al. demonstrate spin separation in a semiconductor nanostructure by exploiting the effective magnetic field arising from the spin–orbit interaction and achieve highly polarized spin currents.

    • Makoto Kohda
    • , Shuji Nakamura
    •  & Junsaku Nitta

  • Article |

    Molybdenum disulphide offers some tantalizing advantages over graphene as a material with which to fabricate field-effect transistors. Kimet al. present a comprehensive study of field-effect transistors made from multilayer samples of MoS2and find that they can achieve high carrier mobilities.

    • Sunkook Kim
    • , Aniruddha Konar
    •  & Kinam Kim

  • Article |

    Precise qubit manipulation is essential in quantum computation; however errors can occur from fluctuations in the magnetic field. Wanget al. propose a robust scheme for universal control of qubits in a semiconductor double quantum dot, cancelling leading orders of error in field gradient variation.

    • Xin Wang
    • , Lev S. Bishop
    •  & S. Das Sarma

  • Article |

    Single electron pumps have been proposed as potential candidates for redefining the ampere. This study reports measurements of the quantized current flowing through a semiconductor electron pump with a precision that makes a substantial step towards establishing a direct metric for electrical currents.

    • S.P. Giblin
    • , M. Kataoka
    •  & D.A. Ritchie

  • Article |

    The spin–orbit interaction affects the electronic structure of many solids to give rise to a host of unusual phenomena. Bahramyet al.theoretically examine its role in the non-centrosymmetric compound BiTeI, and find that under the application of pressure, it leads to topologically insulating behaviour.

    • M.S. Bahramy
    • , B.-J. Yang
    •  & N. Nagaosa

  • Article
    | Open Access

    The spin Hall effect is a spin current induced by an electric current, and its occurrence in semiconductors is a promising route to controlling spins and their transport. Here, the inverse spin Hall effect, in which an electric current is induced by a spin current, is observed in silicon for the first time.

    • Kazuya Ando
    •  & Eiji Saitoh

  • Article
    | Open Access

    Studying carrier multiplication in materials is important to understand their transport properties and interaction with light. Hiroriet al. show that intense terahertz pulses can generate electron-hole pairs in GaAs quantum wells that then emit infrared light, contrary to the effect with a DC field.

    • H. Hirori
    • , K. Shinokita
    •  & K. Tanaka

  • Article
    | Open Access

    Nanocrystals are used in light-emitting diodes and solar cells, but their charge transport in films is unclear. Here, the study of PbS nanocrystal films reveals the role of mid-gap states in their charge transport, suggesting different design needs for devices operated in dark (transistors) versus light (solar cells) conditions.

    • Prashant Nagpal
    •  & Victor I. Klimov

  • Article |

    Ferromagnetic systems produced by the transition metal doping of semiconductors may be used as components of spintronic devices. Here, a new ferromagnet, Li1+y(Zn1-xMnx)As, is prepared in bulk quantities and shown to have a critical temperature approaching 50 K.

    • Z. Deng
    • , C.Q. Jin
    •  & Y.J. Uemura

  • Article
    | Open Access

    Two-qubit operation is an essential part of quantum computation, but implementation has been difficult. Gotoet al.introduce optically controllable internuclear coupling in semiconductors providing a simple way of switching inter-qubit couplings in semiconductor-based quantum computers.

    • Atsushi Goto
    • , Shinobu Ohki
    •  & Tadashi Shimizu

  • Article |

    Single nanoparticles are known to emit light intermittently, or 'blink', but the mechanisms describing this phenomenon are not fully understood. This study demonstrates that, for small clusters of blinking nanoparticles, the number of particles within a cluster dramatically influences blinking time.

    • Siying Wang
    • , Claudia Querner
    •  & Marija Drndic

  • Article
    | Open Access

    Water is composed of the electrochemically active species, H+ and OH−, but has not been used as an active electronic material. In this study, a field-effect transistor is developed that uses water-infiltrated nanoporous glass as the gate insulator; this new application of water may be useful in electronics and energy storage.

    • Hiromichi Ohta
    • , Yukio Sato
    •  & Hideo Hosono

  • Article |

    Flicker noise in nanoscale field effect transistors deviates from the simple frequency-dependent behaviour of macroscale objects. Here the authors show that Coulomb repulsion between nearby trap sites leads to an order of magnitude reduction in noise in these devices.

    • N. Clément
    • , K. Nishiguchi
    •  & D. Vuillaume

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