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| Open AccessRoom temperature chirality switching and detection in a helimagnetic MnAu2 thin film
Some materials have an internal degree of freedom called chirality, such as helimagnets, where the magnetic order has a helix structure with a specific chirality. Here, Masuda et al. demonstrate chirality switching and detection at room temperature in helimagnetic MnAu2 thin films.
- Hidetoshi Masuda
- , Takeshi Seki
- & Yoshinori Onose
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Article
| Open AccessEffective electrical manipulation of a topological antiferromagnet by orbital torques
Electrical control of topological magnets is of great interest for future spintronic applications. Here, the authors demonstrate the effective manipulation of antiferromagnetic order in a Weyl semimetal using orbital torques, with implications for neuromorphic device applications.
- Zhenyi Zheng
- , Tao Zeng
- & Jingsheng Chen
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Article
| Open AccessA ferroelectric fin diode for robust non-volatile memory
Designing efficient high-density crossbar arrays are nowadays highly demanded for many artificial intelligence applications. Here, the authors propose a two-terminal ferroelectric fin diode non-volatile memory in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes with high performance and easy fabrication process
- Guangdi Feng
- , Qiuxiang Zhu
- & Chungang Duan
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Article
| Open AccessMotion and teleportation of polar bubbles in low-dimensional ferroelectrics
Nanoscale ferroelectric domains called electric bubbles are shown to behave as dynamical particles. Using atomistic simulations and experiments, the authors reveal a bubble liquid phase and demonstrate teleportation-like displacements of single bubbles.
- S. Prokhorenko
- , Y. Nahas
- & L. Bellaiche
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Article
| Open AccessMultistate structures in a hydrogen-bonded polycatenation non-covalent organic framework with diverse resistive switching behaviors
Hydrogen-bonded organic frameworks as stimuli responsive multistate structures show potential in the field of resistive switching. Here, the authors report a 0D+1D hydrogen-bonded polycatenation non-covalent organic framework showing reversible transformation of multistate-structures triggered by electrical field and temperature, enabling reversibly switchable resistive random-access memory and write-once-read-many-times memory behavior.
- Shimin Chen
- , Yan Ju
- & Zhangjing Zhang
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Article
| Open AccessExtendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides
Nonstoichiometric transition metal dichalcogenides break symmetry, enabling piezo/ferroelectric effects. Here, the authors propose an approach to integrate these properties with diverse 2D materials, advancing multifunctional materials and devices.
- Yi Hu
- , Lukas Rogée
- & Shu Ping Lau
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Article
| Open AccessFull hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing
In-sensor and near-sensor computing are emerging as the next-generation computing paradigm, for high-density and low-power sensory processing. Here, the authors report a fully hardware-implemented artificial visual system for versatile image processing based on multimodal-multifunctional optoelectronic resistive memory devices with optical and electrical resistive switching modes.
- Guangdong Zhou
- , Jie Li
- & Shukai Duan
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Article
| Open AccessRecord high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering
Ferroelectric transistors are promising building blocks for developing energy-efficient memory and logic applications. Here, the authors report a record high 300 K resistance on-off ratio achieved in ferroelectric-gated Mott transistors by exploiting a charge transfer layer to tailor the channel carrier density and mitigate the ferroelectric depolarization effect.
- Yifei Hao
- , Xuegang Chen
- & Xia Hong
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Article
| Open AccessMicro- and nanofabrication of dynamic hydrogels with multichannel information
Responsive hydrogels containing multichannel information have potential in miniature devices, but their fabrication can be challenging. Here, the authors report the creation of hydrogel materials with each pixel containing three-channel information for printing of distinct images in one location.
- Mingchao Zhang
- , Yohan Lee
- & Metin Sitti
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Article
| Open AccessHigh-performance van der Waals antiferroelectric CuCrP2S6-based memristors
Layered thio- and seleno-phosphate ferroelectrics show promise for next-generation memory but have thermal stability issues. Using the electric field-driven phase transition in antiferroelectric CuCrP2S6, the authors introduce a robust memristor, emphasizing the potential of van der Waals antiferroelectrics in advanced neuromorphic computing.
- Yinchang Ma
- , Yuan Yan
- & Xixiang Zhang
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Article
| Open AccessAn ultrasmall organic synapse for neuromorphic computing
Designing high performance organic neuromorphic devices remains a challenge. Here, Liu et al. report the development of an organic synapse based on a semicrystalline polymer PBFCL10 with device dimension of 50 nm and integration size of 1 Kb and a mixed‐signal neuromorphic hardware system based on the organic neuromatrix and FPGA controller for decision‐making tasks.
- Shuzhi Liu
- , Jianmin Zeng
- & Gang Liu
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Article
| Open AccessField-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking
Switching the magnetization of a ferromagnetic layer with a current induced spin-orbit torques requires the breaking symmetry, either via an in-plane magnetic field, or in the case of field-free switching via a device asymmetry. Here, Liang et al carefully control the Burgers vector of crystal dislocations to break the in-plane symmetry and allow for field-free switching of magnetization in a Pt/Co heterostructure.
- Yuhan Liang
- , Di Yi
- & Yuan-Hua Lin
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Article
| Open AccessNon-volatile optoelectronic memory based on a photosensitive dielectric
Designing high efficient optoelectronic memory remains a challenge. Here, the authors report a novel optoelectronic memory device based on a photosensitive dielectric that is an insulator in dark and a semiconductor under irradiation with multilevel storage ability, low energy consumption and good compatibility.
- Rui Zhu
- , Huili Liang
- & Zengxia Mei
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Article
| Open AccessTopological soliton molecule in quasi 1D charge density wave
Soliton molecules have been observed only in the temporal dimension for classical wave optical systems. Here, the authors use scanning tunneling spectroscopy to identify a topological soliton molecule in real space in a quasi-1D charge-ordered phase of indium atomic wires.
- Taehwan Im
- , Sun Kyu Song
- & Han Woong Yeom
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Article
| Open AccessLong-range, non-local switching of spin textures in a frustrated antiferromagnet
Several recent works have demonstrated current based control of antiferromagnetic order, with the potential that such switching could be used for information processing and storage. Here, Haley et al demonstrate that in FexNbS2, this switching is non-local, with magnetic order changing due to an applied current at distances much larger than the spin diffusion length in the material.
- Shannon C. Haley
- , Eran Maniv
- & James G. Analytis
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Article
| Open AccessAnomalous polarization enhancement in a van der Waals ferroelectric material under pressure
Here, the authors report a hydrostatic-pressure-driven anomalous enhancement of the spontaneous polarization of CuInP2S6 at room temperature, in contrast to the standard pressure-induced suppression of ferroelectricity. The polarization enhancement stems from the spatial instability of the Cu cations and increase of Cu occupancy at the interlayer site.
- Xiaodong Yao
- , Yinxin Bai
- & Jinlong Zhu
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| Open AccessField-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N
Spin-orbit torques, arising in systems with strong spin-orbit interactions, have been a major avenue of research for the potential electric control of magnetization. Recently, unconventional spin-orbit torques, with spin polarizations aligned in atypical ways have garnered interest due to the numerous advantages offered compared to their conventional counterparts. Here, Xue et al investigate ‘type-x’ spin-orbit torque switching, demonstrating both unique spin polarizations, and field-free magnetization switching in Platinum/Cobalt multilayers.
- Fen Xue
- , Shy-Jay Lin
- & Shan X. Wang
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Article
| Open AccessNanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution
Designing efficient multistate resistive switching devices is promising for neuromorphic computing. Here, the authors demonstrate a reversible hydrogenation in WO3 thin films at room temperature with an electrically-biased scanning probe. The associated insulator to metal transition offers the opportunity to precisely control multistate conductivity at nanoscale.
- Fan Zhang
- , Yang Zhang
- & Pu Yu
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Article
| Open AccessAll-ferroelectric implementation of reservoir computing
While reservoir computing can process temporal information efficiently, its hardware implementation remains a challenge due to the lack of robust and energy efficient hardware. Here, the authors develop an all-ferroelectric reservoir computing system, showing high accuracies and low power consumptions in various tasks like the time-series prediction.
- Zhiwei Chen
- , Wenjie Li
- & Jun-Ming Liu
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Article
| Open AccessNon-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas
A central goal of spintronics is electric control of magnetism. One particularly promising method makes use of spin-orbit torques which arise due to the combination of electric current, and the intrinsic spin-orbit effect in a material. Here, Grezes et al demonstrate non-volatile electrical control of the spin-orbit torque generated at the interface between an oxide and a metal.
- Cécile Grezes
- , Aurélie Kandazoglou
- & Jean-Philippe Attané
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Article
| Open AccessMultimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate
Practical anticounterfeiting labels should possess both high-capacity and robustness, and should allow easy fabrication and readout. Here, the authors show how to heterogeneously grow robust and stable chaotic pattern of diamond microparticles - containing SiV defects - on silicon substrates.
- Tongtong Zhang
- , Lingzhi Wang
- & Zhiqin Chu
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Article
| Open AccessDynamic self-organisation and pattern formation by magnon-polarons
Increasing the speed of magnetization switching is an obvious pathway to improve spintronic device performance. However, very fast magnetization switching is accompanied by instabilities. Here, Gidding et al study these instabilities using optical pumping, and show that instability generated spin-waves can achieve a high enough amplitude to drive switching of the magnetization, with a distinctive coherent pattern.
- M. Gidding
- , T. Janssen
- & A. Kirilyuk
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Article
| Open AccessRandom fractal-enabled physical unclonable functions with dynamic AI authentication
In order to be used on a large scale, unclonable tags for anti-counterfeiting should allow mass production at low cost, as well as fast and easy authentication. Here, the authors show how to use one-step annealing of gold films to quickly realize robust tags with high capacity, allowing fast deep-learning based authentication via smartphone readout.
- Ningfei Sun
- , Ziyu Chen
- & Qian Liu
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Article
| Open AccessOrigami-based integration of robots that sense, decide, and respond
Origami-inspired engineering has enabled intelligent materials and structures to react to environments, yet a complete sense-decide-act autonomous loop is still challenging. Yan et al. introduce autonomous origami robots by embedding sensing, computing, and actuating in compliant, conductive materials.
- Wenzhong Yan
- , Shuguang Li
- & Ankur Mehta
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Article
| Open AccessElectrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6
Manipulating electrical and magnetic anisotropies will stimulate multi-terminal device applications. Here, the authors discover axis dependence of current rectifications, magnetic properties and magnon modes in van der Waals multiferroic CuCrP2S6.
- Xiaolei Wang
- , Zixuan Shang
- & Jianhua Zhao
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Article
| Open AccessHighly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks
Hardware-based neural networks can provide a significant breakthrough in artificial intelligence. Here, the authors demonstrate an integrated 3-dimensional ferroelectric array with a layer-by-layer computation for area-efficient neural networks.
- Ik-Jyae Kim
- , Min-Kyu Kim
- & Jang-Sik Lee
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Article
| Open Accessγ-BaFe2O4: a fresh playground for room temperature multiferroicity
The application of multiferroics is often limited by low ordering temperatures. Here, the authors show that BaFe2O4 is a room temperature antiferromagnet with improper ferroelectricity, suggesting it as a playground for the study of multiferroicity.
- Fabio Orlandi
- , Davide Delmonte
- & Francesco Mezzadri
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| Open AccessGiant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3
Conductive domain walls are envisioned for future nanoelectronics and computational hardware. Here, the authors investigate an approach to use rewriteable arrangements of highly conductive channels based on nominally neutral 180°-domain walls.
- Felix Risch
- , Yuri Tikhonov
- & Igor Stolichnov
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Article
| Open AccessIn-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array
The separation of sensor, memory, and processor in a recognition system deteriorates the latency of decision-making and increases the overall computing power. Here, Zhang et al. develop a photoelectronic reservoir computing system, consisting of DUV photo-synapses and a memristor array, to detect and recognize the latent fingerprint with in-sensor and parallel in-memory computing.
- Zhongfang Zhang
- , Xiaolong Zhao
- & Shibing Long
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Article
| Open AccessProbabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors
Designing a computing scheme to solve complex tasks as the big data field proliferates remains a challenge. Here, the authors present a probabilistic bit generation hardware built using the random nature of CuxTe1−x/HfO2/Pt memristors capable of performing logic gates with invertible mode, showing the expandability to complex logic circuits.
- Kyung Seok Woo
- , Jaehyun Kim
- & Cheol Seong Hwang
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Article
| Open AccessLow-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer
Realizing fast nonvolatile floating gate memories is constrained by the slow tunnelling mechanism for charge injection. Here, Chen et al. demonstrate operation speed of 20 ns and power consumption of 10 fJ using graphdiyne oxide as a threshold switching layer instead of a dielectric blocking layer.
- Yuan Li
- , Zhi Cheng Zhang
- & Jin Zhang
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| Open AccessNonvolatile ferroelectric domain wall memory integrated on silicon
Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.
- Haoying Sun
- , Jierong Wang
- & Yuefeng Nie
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Article
| Open AccessA dynamic assembly-induced emissive system for advanced information encryption with time-dependent security
The development of advanced materials for information encryption is desirable. Here, the authors report materials that enable orthogonal and temporal encryption of information via dynamic assembly-induced multicolor pyrene-based supramolecular systems.
- Qian Wang
- , Biyan Lin
- & Da-Hui Qu
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Article
| Open AccessA confined-etching strategy for intrinsic anisotropic surface wetting patterning
Anisotropic functional patterned surfaces have shown significant applications in microfluidics, biomedicine, and optoelectronics. Here, authors demonstrate a fast and mask-free etching method for accurate surface patterning by confined decomposition, enabling the efficient fabrication of complex patterns.
- Rui Feng
- , Fei Song
- & Yu-Zhong Wang
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Article
| Open AccessWafer-scale solution-processed 2D material analog resistive memory array for memory-based computing
Neuromorphic computing requires the realization of high-density and reliable random-access memories. Here, Thean et al. demonstrate wafer-scale integration of solution-processed 2D MoS2 memristor arrays which show long endurance, long memory retention, low device variations, and high on/off ratio.
- Baoshan Tang
- , Hasita Veluri
- & Aaron V-Y. Thean
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Article
| Open AccessFerroelectric photosensor network: an advanced hardware solution to real-time machine vision
Robust, fast, and low-power hardware platforms are desirable for the implementation of real-time machine vision. Here the authors develop a computing-in-sensor network using ferroelectric photo sensors with remanent-polarization-controlled photo responsivities.
- Boyuan Cui
- , Zhen Fan
- & Jun-Ming Liu
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Article
| Open AccessPatterned crystal growth and heat wave generation in hydrogels
The crystallization of metastable liquid phase change materials releases stored energy upon nucleation. Here, the authors demonstrate area-selective activation of thermoresponsive processes by exothermic crystallization of sodium acetate into trihydrate crystals within a patterned polyacrylamide hydrogel.
- Thomas B. H. Schroeder
- & Joanna Aizenberg
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Article
| Open AccessRules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials
In phase-change memory, writing speed and data retention are two seemingly conflicting performances. Here the authors report hierarchical melt and coordinate bond strategies to stabilize a medium-range crystal-like region and amorphous region, respectively.
- Jin Zhao
- , Wen-Xiong Song
- & Zhitang Song
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Article
| Open AccessFerroelectric phase-transition frustration near a tricritical composition point
Phase transition brings a plethora of exotic phenomena and intriguing effects such as spin and charge frustration. However, the phase transition order is not always explicit. Here, the authors discover phase transition frustration near a tricritical composition point in ferroelectric Pb(Zr,Ti)O3.
- Xian-Kui Wei
- , Sergei Prokhorenko
- & Zuo-Guang Ye
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Article
| Open AccessThe potential of chemical bonding to design crystallization and vitrification kinetics
Tailoring the crystallization kinetics of materials is important for targeting applications. Here the authors observe a remarkable dependence of crystallization and vitrification kinetics and attribute it to systematic bonding changes for a class of materials between metallic and covalent bonding.
- Christoph Persch
- , Maximilian J. Müller
- & Matthias Wuttig
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Article
| Open AccessEngineering polar vortex from topologically trivial domain architecture
The majority of polar structures emerging naturally in ferroelectrics are topologically trivial. Here, the authors demonstrate reconstruction of topologically trivial strip-like domain architecture into arrays of polar vortex in (PbTiO3)10/(SrTiO3)10 superlattice.
- Congbing Tan
- , Yongqi Dong
- & Jiangyu Li
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Article
| Open AccessA mechanochromic donor-acceptor torsional spring
Force sensing using mechanochromic polymers is currently limited to two state systems and does not allow directly correlating the force with the absorption or emission wavelength. Here, the authors present a mechanochromic donor-acceptor torsional spring that undergoes force-induced planarization during uniaxial elongation leading to force dependent red-shifted absorption and emission spectra.
- Maximilian Raisch
- , Wafa Maftuhin
- & Michael Sommer
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Article
| Open AccessDesigning zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
Halide perovskite has been applied for resistive switching memory devices, but there are challenges remained to achieve practical application. By using high-throughput screening based on first-principles calculations, the authors discover that lead-free dimer-Cs3Sb2I9 meets the requirements, which exhibits switching speed of 20 ns.
- Youngjun Park
- , Seong Hun Kim
- & Jang-Sik Lee
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Article
| Open AccessWide-range lifetime-tunable and responsive ultralong organic phosphorescent multi-host/guest system
Though high efficiency has been realized for ultralong organic phosphorescence (UOP) materials, realizing wide ranging and tunable lifetime in these materials remains a challenge. Here, the authors report a multi-host/guest UOP system with wide-ranging tunable lifetime via changing the host matrix.
- Zongliang Xie
- , Xiayu Zhang
- & Wei Huang
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Article
| Open AccessAn alternative approach to nucleic acid memory
Encoding data in DNA is a promising approach to high density data storage. Here the authors present a prototype sequencing-free method that uses the spatial orientation of DNA strands with super-resolution microscopy readout.
- George D. Dickinson
- , Golam Md Mortuza
- & William L. Hughes
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Article
| Open Access90% yield production of polymer nano-memristor for in-memory computing
Though polymer memristors are promising for low‐power flexible edge computing applications, realizing efficient nanometer‐scale arrays remains a challenge. Here, the authors report a record high 90% production yield in nm‐scale 2D conjugated polymer memristors with homogeneous resistive switching.
- Bin Zhang
- , Weilin Chen
- & Yu Chen
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Article
| Open AccessVan der Waals engineering of ferroelectric heterostructures for long-retention memory
The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals.
- Xiaowei Wang
- , Chao Zhu
- & Zheng Liu
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Article
| Open AccessVisualizing atomic structure and magnetism of 2D magnetic insulators via tunneling through graphene
In this work Qiu et al. demonstrate that the application of van der Waals technology to STM/STS will dramatically expand the capabilities of the latter, allowing STM/STS to investigate the structure, electronic properties and magnetism of 2D magnetic insulators at the atomic scale.
- Zhizhan Qiu
- , Matthew Holwill
- & Jiong Lu
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Article
| Open AccessOn-the-fly closed-loop materials discovery via Bayesian active learning
Machine learning driven research holds big promise towards accelerating materials’ discovery. Here the authors demonstrate CAMEO, which integrates active learning Bayesian optimization with practical experiments execution, for the discovery of new phase- change materials using X-ray diffraction experiments.
- A. Gilad Kusne
- , Heshan Yu
- & Ichiro Takeuchi