Featured
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Article |
Thousands of conductance levels in memristors integrated on CMOS
Chips with 256 × 256 memristor arrays that were monolithically integrated on complementary metal–oxide–semiconductor (CMOS) circuits in a commercial foundry achieved 2,048 conductance levels in individual memristors.
- Mingyi Rao
- , Hao Tang
- & J. Joshua Yang
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Article
| Open Access
Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction
The authors report observation of tunnelling magnetoresistance in an all-antiferromagnetic tunnel junction consisting of Mn3Sn/MgO/Mn3Sn, laying the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets.
- Xianzhe Chen
- , Tomoya Higo
- & Satoru Nakatsuji
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Article |
Control of chiral orbital currents in a colossal magnetoresistance material
Current-control of chiral orbital current-enabled colossal magnetoresistance offers a new paradigm for quantum technologies.
- Yu Zhang
- , Yifei Ni
- & Gang Cao
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Article |
Fractional antiferromagnetic skyrmion lattice induced by anisotropic couplings
Theoretically predicted fractional antiferromagnetic skyrmions are experimentally realized in MnSc2S4 and are found to originate from anisotropic couplings over nearest neighbours in the crystal lattice.
- Shang Gao
- , H. Diego Rosales
- & Oksana Zaharko
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Article |
Non-volatile electric control of spin–charge conversion in a SrTiO3 Rashba system
The polarization direction of a ferroelectric-like state can be used to control the conversion of spin currents into charge currents at the surface of strontium titanate, a non-magnetic oxide.
- Paul Noël
- , Felix Trier
- & Jean-Philippe Attané
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Letter |
Reading and writing single-atom magnets
A two-bit magnetic memory is demonstrated, based on the magnetic states of individual holmium atoms, which are read and written in a scanning tunnelling microscope set-up and are stable over many hours.
- Fabian D. Natterer
- , Kai Yang
- & Christopher P. Lutz
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Letter |
Ultrafast nonthermal photo-magnetic recording in a transparent medium
Ultrafast photo-magnetic recording in transparent films of the dielectric cobalt-substituted garnet has very low heat load and is much faster than existing alternatives.
- A. Stupakiewicz
- , K. Szerenos
- & A. V. Kimel
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Letter |
Deterministic switching of ferromagnetism at room temperature using an electric field
Multiferroic devices that can switch magnetization with electric field at room temperature are desirable, but in BiFeO3 the required direct 180-degree switch is thermodynamically forbidden; here it is shown that such switching is possible because the kinetics of the switching process favours a two-step sequence of partial switching.
- J. T. Heron
- , J. L. Bosse
- & R. Ramesh
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Letter |
Potential for spin-based information processing in a thin-film molecular semiconductor
The characteristic relaxation and dephasing times of the electronic spins in thin-film copper phthalocyanine are long enough that this common, low-cost organic semiconductor has potential for both quantum and classical information processing.
- Marc Warner
- , Salahud Din
- & Gabriel Aeppli
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Research Highlights |
Magnetic switch for memory
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Opinion |
Harnessing telecoms cables for science
Telecommunications companies and oceanographers should work together to plug old and new submarine cables into research projects, says Yuzhu You. A global network could monitor climate change.
- Yuzhu You
Phase-change memory via a phase-changeable self-confined nano-filament