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Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

Nature Nanotechnology volume 8, pages 147–148 (2013)Cite this article

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To the Editor

In our recent paper1, we report on switchable monolayer MoS2 transistors with a high on/off ratio and we claim that dielectric screening can be used to increase the mobility of monolayer MoS2. We estimated its mobility using a method that was applied previously by Lemme et al. to top-gated graphene nanoribbons2, in which they extracted the channel mobility from the back-gating characteristic of the device, acquired with the top-gate disconnected. This can result in overestimated values of mobilities due to the capacitive coupling between the gates.

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Figure 1: Hall-effect measurements on monolayer MoS2.

References

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  1. Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland

    B. Radisavljevic & A. Kis

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  1. B. Radisavljevic
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  2. A. Kis
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Correspondence to A. Kis.

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Radisavljevic, B., Kis, A. Reply to 'Measurement of mobility in dual-gated MoS2 transistors'. Nature Nanotech 8, 147–148 (2013). https://doi.org/10.1038/nnano.2013.31

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