Volume 1 Issue 6, June 2018

Electron tunnelling through a two-dimensional magnetic insulator is assisted by magnon inelastic processes that provide spin-filtering.

The electric field in a Schottky barrier can be used to control spin–orbit magnetic fields.

A heterostructure made from various two-dimensional materials can be used to build a device that functions as a diode, transistor, photodetector and non-volatile memory.

This Review Article examines the development of in-memory computing using resistive switching devices.

Electrons can tunnel through thin ferromagnetic CrBr₃ barriers, sandwiched between graphene electrodes, via the emission of magnons, which suggests that these magnetic tunnel barriers could be used for spin injection.

Current-induced spin–orbit magnetic fields at an Fe/GaAs (001) interface can be controlled with an electric field in the Schottky barrier, an effect that could be used to develop low-power spin–orbit torque devices.

An asymmetric van der Waals heterostructure device, which is composed of graphene, hexagonal boron nitride, molybdenum disulfide and molybdenum ditelluride, can function as a high-performance diode, transistor, photodetector and programmable rectifier.

A giant magnetoresistance sensor that has a topologically protected magnetic vortex state in the transducer element can provide low magnetic noise, a high linear regime and negligible hysteresis.

The emergence of dynamic random access memory (DRAM) in the 1970s had a huge impact on the future of digital computing. Its inventor, Robert H. Dennard, explains how the drive for simplicity led to this breakthrough.