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High-performance metal halide perovskite transistors

Nature Electronics volume 6, pages 559–571 (2023)Cite this article

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Abstract

Advances in metal halide perovskite semiconductors for optoelectronic devices have revived research interest in their applicability in transistors. Despite initial challenges affecting perovskite-based transistors in terms of reproducibility and ambient-temperature operation capability, notable performance improvements have been achieved through the fine-tuning of channel material compositions, thin-film processing and device engineering. However, critical insight into the electrical properties of the materials is lacking, and their potential for application in large-area and microscale electronics remains unclear. Here we explore the development of metal halide perovskite transistors and compare their characteristics with those of mainstream semiconductor technologies. We examine the electronic and structural properties of halide perovskites, and discuss key perovskite transistors developed so far, focusing on defect chemistry and corresponding electrical properties. We also consider the challenges that exist in developing next-generation electronics and circuits with perovskites, and highlight potential research areas for future development.

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Fig. 1: Evolution of halide perovskite FETs.
Fig. 2: Electronic properties of halide perovskites.
Fig. 3: Electrical characterization and defect chemistry of Pb2+/Sn2+ perovskite FETs.
Fig. 4: Roadmap of perovskite FET development.

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Acknowledgements

This study was supported by the Ministry of Science and ICT through the National Research Foundation, funded by the Korean government (2021R1A2C3005401 and RS-2023-00260608), the BK21 FOUR Program for Education Program for Innovative Chemical Engineering Leaders of the NRF grant funded by the MIST of the Korean government, and Samsung Display Corporation. L.D. acknowledges support from the US Department of Energy, Office of Basic Energy Sciences, under award number DE-SC0022082. A.P. has received funding from the ERC project SOPHY under grant agreement number 771528 and has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement number 956270

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Authors and Affiliations

  1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea

    Ao Liu, Huihui Zhu, Youjin Reo & Yong-Young Noh

  2. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China

    Sai Bai

  3. Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Milan, Italy

    Mario Caironi & Annamaria Petrozza

  4. Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN, USA

    Letian Dou

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A.L., H.Z. and Y.-Y.N. conceived the project and all authors contributed to manuscript writing.

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Correspondence to Huihui Zhu or Yong-Young Noh.

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Liu, A., Zhu, H., Bai, S. et al. High-performance metal halide perovskite transistors. Nat Electron 6, 559–571 (2023). https://doi.org/10.1038/s41928-023-01001-2

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