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Validating negative differential capacitance for advanced low-power devices

The negative differential capacitance (NDC) of ferroelectrics could be used to reduce the energy consumption of ultra-scaled logic devices. An NDC phenomenon in ultrathin ferroelectric zirconium-doped hafnia is demonstrated. Field-effect transistors incorporating this ferroelectric in the gate stack display enhanced on-currents and reduced off-currents compared with conventional analogues, as well as tunable and enduring NDC.

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Fig. 1: NDC effect in an HZO-containing FinFET.


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This is a summary of: Jo, S. et al. Negative differential capacitance in ultrathin ferroelectric hafnia. Nat. Electron. (2023).

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Validating negative differential capacitance for advanced low-power devices. Nat Electron 6, 335–336 (2023).

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