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Cryogenic memory technologies

Nature Electronics volume 6, pages 185–198 (2023)Cite this article

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Abstract

Cryogenic data storage technology is of use in superconducting single-flux quantum electronics and quantum computing. However, the lack of compatible cryogenic memory technology, which can operate at temperatures of 4 K (or lower), hinders the development of practical and scalable systems. Here we examine the development of cryogenic memory technologies. We explore three areas of memory technology: cryogenic non-superconducting memories (including those based on charge and resistance), superconducting memories (including those based on Josephson junctions, superconducting quantum interference devices and superconducting memristors) and hybrid memories (which use both superconducting and non-superconducting technologies). We consider the key challenges involved in the integration of such memories with single-flux quantum circuits and quantum computers. We also provide a comparison of the capabilities of the different technologies in the context of the requirements of superconducting electronics and quantum computing.

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Fig. 1: Advantages and taxonomy of cryogenic memory technologies.
Fig. 2: Cryogenic characterization of non-superconducting charge-based memories.
Fig. 3: Non-superconducting resistance-based memories.
Fig. 4: JJ-based superconducting memories.
Fig. 5: MJJ, superconducting memristor (ScM), and ferroelectric SQUID-based superconducting memories.
Fig. 6: Hybrid semiconductor–superconductor memories.

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Data availability

The data that support the plots within this paper are available from the corresponding author on reasonable request.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, USA

    Shamiul Alam & Ahmedullah Aziz

  2. Department of Physics, Princeton University, Princeton, NJ, USA

    Md Shafayat Hossain

  3. Intel Labs, Hillsboro, OR, USA

    Srivatsa Rangachar Srinivasa

Authors
  1. Shamiul Alam
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  2. Md Shafayat Hossain
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  3. Srivatsa Rangachar Srinivasa
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  4. Ahmedullah Aziz
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All authors conceived the idea of this Review. S.A. performed the literature analysis and collected data. All authors took part in writing the paper, discussed the data and contributed to the final paper. A.A. supervised the project.

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Correspondence to Ahmedullah Aziz.

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Alam, S., Hossain, M.S., Srinivasa, S.R. et al. Cryogenic memory technologies. Nat Electron 6, 185–198 (2023). https://doi.org/10.1038/s41928-023-00930-2

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