Abstract
Field-effect transistors based on two-dimensional materials are a potential replacement for silicon-based devices in next-generation semiconductor chips. However, the weak interfacial adhesion energy between two-dimensional materials and substrates can lead to low yields and non-uniform transistors on the wafer scale. Furthermore, conventional photolithography processes—including photochemical reactions and chemical etching—can damage atomically thin materials. Here we show that the interfacial adhesion energy between two-dimensional materials and different substrates can be quantified using a four-point bending method. We find that a molybdenum disulfide/silicon dioxide interface has an interfacial adhesion energy of 0.2 J m−2, which can be modulated from 0 to 1.0 J m−2 by incorporating self-assembled monolayers with different end-termination chemistries. We use this to create an adhesion lithography method that is based on adhesion energy differences and physical etching processes. We use this approach to fabricate more than 10,000 molybdenum disulfide field-effect transistors on six-inch wafers with a yield of around 100%.
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Data availability
Data that support the findings of this study are available from the corresponding author upon reasonable request.
Code availability
The computer code used in this study is available from the corresponding author upon reasonable request.
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Acknowledgements
This work was supported by the Samsung Advanced Institute of Technology, Samsung Electronics. We appreciate the insightful discussions with Y. Cho and data analysis by W. Baek and J. Chung.
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V.L.N. conceived the main idea, performed most of the experiments and interpreted the data. M.S. synthesized MoS2 and WS2 and interpreted the experimental data. J.K. wrote the program for the extraction of FET properties. E.-K.L. contributed to the four-point bending machine setup. W.-J.J. and H.W.K. performed the STM measurement. C.L., J.H.K. and J.P. provided the 500-nm-grain-size MoS2 and WSe2. M.S.Y. performed the WSe2 growth. V.L.N. and H.‐J.S. wrote the manuscript. H.‐J.S. supervised this project. All the authors discussed the results and commented on the manuscript.
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Supplementary Figs. 1–29, Equations (1) and (2).
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Nguyen, V.L., Seol, M., Kwon, J. et al. Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography. Nat Electron 6, 146–153 (2023). https://doi.org/10.1038/s41928-022-00890-z
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DOI: https://doi.org/10.1038/s41928-022-00890-z
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