Sub-1-nm vertical field-effect transistors can be created by transferring pre-made metal film contacts onto two-dimensional materials.
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Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures
Nature Communications Open Access 07 February 2024
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References
Song, T. IEEE Trans. Nanotechnol. 18, 240–251 (2019).
Jung, Y. et al. Nat. Electron. 2, 187–194 (2019).
Wang, Y. et al. Nature 568, 70–74 (2019).
Yu, W. J. et al. Nat. Mater. 12, 246–252 (2013).
Choi, Y. et al. Adv. Mater. 28, 3742–3748 (2016).
Liu, L. et al. Nat. Electron. https://doi.org/10.1038/s41928-021-00566-0 (2021).
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Zhang, J., Gao, F. & Hu, P. A vertical transistor with a sub-1-nm channel. Nat Electron 4, 325 (2021). https://doi.org/10.1038/s41928-021-00583-z
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DOI: https://doi.org/10.1038/s41928-021-00583-z
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Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures
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