Native high-k oxides for 2D transistors

The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

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Fig. 1: Development of FETs with Bi2O2Se channels and native Bi2SeO5 insulators.


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Correspondence to Yury Yu. Illarionov or Tibor Grasser.

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Illarionov, Y.Y., Knobloch, T. & Grasser, T. Native high-k oxides for 2D transistors. Nat Electron 3, 442–443 (2020).

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