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Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Nature Electronics volume 2, pages 439–450 (2019)Cite this article

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Abstract

The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the options for growth and integration of high-efficiency electronic and photonic devices on dissimilar materials. Accordingly, advanced epitaxial growth and layer lift-off techniques have been developed to address issues relating to lattice mismatch. Here, we review epitaxial growth and layer-transfer techniques for monolithic integration of dissimilar single-crystalline materials for application in advanced electronic and photonic devices. We also examine emerging epitaxial growth techniques that involve two-dimensional materials as an epitaxial release layer and explore future integrated computing systems that could harness both advanced epitaxial growth and lift-off approaches.

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Fig. 1: Overview of heterogeneous integration of dissimilar materials for electronic and photonic applications.
Fig. 2: Conventional epitaxy techniques.
Fig. 3: Advanced epitaxy techniques.
Fig. 4: Epitaxial lift-off techniques.
Fig. 5: Demonstration of advanced heteroepitaxial techniques for heterogeneous integration of dissimilar materials onto silicon.
Fig. 6: Demonstrations of advanced epitaxial lift-off and transfer techniques for heterogeneous integration of devices onto silicon.

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Acknowledgements

We acknowledge funding from the Department of Energy, Office of Energy Efficiency and Renewable Energy, and Defense Advanced Research Projects Agency (award numbers 027049-00001 and D19AP00037).

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Authors and Affiliations

  1. Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA

    Hyun Kum, Wei Kong, Hyunseok Kim, Yongmo Park, Yunjo Kim, Sang-Hoon Bae & Jeehwan Kim

  2. Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA

    Hyun Kum, Wei Kong, Hyunseok Kim, Yongmo Park, Yunjo Kim, Sang-Hoon Bae & Jeehwan Kim

  3. Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA

    Doeon Lee, Yongmin Baek & Kyusang Lee

  4. Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA

    Jeehwan Kim

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Contributions

H.Kum, K.L., and J.K. conceived the project. All authors contributed to the writing of the manuscript.

Corresponding authors

Correspondence to Kyusang Lee or Jeehwan Kim.

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Kum, H., Lee, D., Kong, W. et al. Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices. Nat Electron 2, 439–450 (2019). https://doi.org/10.1038/s41928-019-0314-2

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