How we made the IGZO transistor

Thin-film transistors made from indium gallium zinc oxide (IGZO) are driving the next evolution in active-matrix flat panel displays. Hideo Hosono recounts how demand for a high-performance alternative to amorphous silicon transistors led to their development.

Access options

Rent or Buy article

Get time limited or full article access on ReadCube.

from$8.99

All prices are NET prices.

Fig. 1

Hideya Kumomi

Author information

Correspondence to Hideo Hosono.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Hosono, H. How we made the IGZO transistor. Nat Electron 1, 428 (2018) doi:10.1038/s41928-018-0106-0

Download citation

Further reading