How we made the IGZO transistor

Thin-film transistors made from indium gallium zinc oxide (IGZO) are driving the next evolution in active-matrix flat panel displays. Hideo Hosono recounts how demand for a high-performance alternative to amorphous silicon transistors led to their development.

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Hideya Kumomi

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Correspondence to Hideo Hosono.

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Hosono, H. How we made the IGZO transistor. Nat Electron 1, 428 (2018) doi:10.1038/s41928-018-0106-0

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