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High-performance, multifunctional devices based on asymmetric van der Waals heterostructures

Nature Electronicsvolume 1pages356361 (2018) | Download Citation

Abstract

Two-dimensional materials are of interest for the development of electronic devices due to their useful properties and compatibility with silicon-based technology. Van der Waals heterostructures, in which two-dimensional materials are stacked on top of each other, allow different materials and properties to be combined and for multifunctional devices to be created. Here we show that an asymmetric van der Waals heterostructure device, which is composed of graphene, hexagonal boron nitride, molybdenum disulfide and molybdenum ditelluride, can function as a high-performance diode, transistor, photodetector and programmable rectifier. Due to the asymmetric structure of the device, charge-carrier injection can be switched between tunnelling and thermal activation under negative and positive bias conditions, respectively. As a result, the device exhibits a high current on/off ratio of 6 × 108 and a rectifying ratio of ~108. The device can also function as a programmable rectifier with stable retention and continuously tunable memory states, as well as a high program/erase current ratio of ~109 and a rectification ratio of ~107.

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Acknowledgements

This work was supported by the Ministry of Science and Technology of China (no. 2016YFA0200700), the National Natural Science Foundation of China (nos. 61625401, 61474033, 61574050 and 11674072), the Strategic Priority Research Program of the Chinese Academy of Sciences (grant no. XDA09040201) and the CAS Key Laboratory of Nanosystem and Hierarchical Fabrication. The authors also gratefully acknowledge the support of the Youth Innovation Promotion Association CAS.

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Author notes

  1. These authors contributed equally: Ruiqing Cheng, Feng Wang

Affiliations

  1. CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, China

    • Ruiqing Cheng
    • , Feng Wang
    • , Lei Yin
    • , Zhenxing Wang
    • , Yao Wen
    • , Tofik Ahmed Shifa
    •  & Jun He
  2. University of Chinese Academy of Science, Beijing, China

    • Ruiqing Cheng
    • , Lei Yin
    • , Yao Wen
    • , Tofik Ahmed Shifa
    •  & Jun He

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Contributions

J.H. conceived and supervised the project. R.C. fabricated the devices and performed electrical and optoelectronic measurements. L.Y. carried out the Raman and AFM measurements. R.C., F.W. and J.H. analysed the data and co-wrote the manuscript in consultation with L.Y., Z.W., Y.W. and T.A.S.

Competing interests

The authors declare no competing interests.

Corresponding author

Correspondence to Jun He.

Supplementary information

  1. Supplementary Information

    Supplementary Table 1 and Supplementary Figures 1–10

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DOI

https://doi.org/10.1038/s41928-018-0086-0