Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

Author Correction: Robust memristors based on layered two-dimensional materials

The Original Article was published on 05 February 2018

Correction to: Nature Electronics https://doi.org/10.1038/s41928-018-0021-4, published online 5 February 2018.

In the version of this Article originally published, the author Xiaoqing Pan's two affiliations with the University of California, Irvine, were mistakenly omitted. They are: Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, USA; Department of Physics and Astronomy, University of California, Irvine, CA, USA. These have now been included in the Article.

Author information

Affiliations

Authors

Corresponding authors

Correspondence to J. Joshua Yang, Peng Wang or Feng Miao.

Additional information

The original article can be found online at https://doi.org/10.1038/s41928-018-0021-4.

The original article can be found online at https://doi.org/10.1038/s41928-018-0021-4.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Wang, M., Cai, S., Pan, C. et al. Author Correction: Robust memristors based on layered two-dimensional materials. Nat Electron 1, 203 (2018). https://doi.org/10.1038/s41928-018-0044-x

Download citation

Search

Quick links