Correction to: Scientific Reports https://doi.org/10.1038/s41598-020-68275-w, published online 09 July 2020
The original version of this Article contained an error in Figure 3, panel (a), where the positioning of the atomic structure overlaid on the HAADF STEM image was incorrect.
The original Figure 3 and its accompanying legend appear below.
(a, b) High-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) image of a CuCrO2 thin film grown on an Al2O3 (0001) substrate seen along the (a) [\(\overline{1}100\)] and (b) [1000] zone axis. (c)–(f) Electron energy loss spectroscopy (EELS) spectrum imaging of the CuCrO2/Al2O3 interface seen along the [1000] zone axis. The monolayers (MLs) for CuCrO2 thin film and Al2O3 substrate in the (0001) direction were defined as a set of Cu and CrO2 sublayers and a single Al2O3 layer, respectively. (c) Simultaneously acquired HAADF–STEM image. (d) Color-coded composite elemental map with Al in blue, Cr in green, and Cu in red. (e) Integrated line profile of Al, Cr, and Cu signals in (d) across the interface. The dotted lines in (c)–(e) indicate the position of the CuCrO2/Al2O3 interface. (f) Layer-resolved integrated EELS spectra of Al–L2,3, Cr–M4,5, O–K, Cr–L2,3, and Cu–L2,3 edges. The position of the atomic layer corresponding to each EELS spectrum is indicated by the numerical index between (c) and (d). (g) EELS O–K edge spectra of the Al2O3 substrate, CuCrO2 thin film, and Cr1−xAlxO2 interface layer with an X-ray absorption spectroscopy (XAS) O–K edge reference spectrum of CuAlO230. It is worth noting that no discernible vacancy-related features could be detected from the integrated line-profile spectra.
The original Article has been corrected.
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Ok, J.M., Yoon, S., Lupini, A.R. et al. Author Correction: Interfacial stabilization for epitaxial CuCrO2 delafossites. Sci Rep 13, 4250 (2023). https://doi.org/10.1038/s41598-023-31162-1
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DOI: https://doi.org/10.1038/s41598-023-31162-1
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