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Data availability
The datasets generated and/or analysed for this Reply are available from the corresponding authors on reasonable request.
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Acknowledgements
This work was supported by Samsung Electronics (Samsung-SKKU Graphene/2D Center) and the research fund (NRF-2017R1E1A1A01074493 and NRF-2019R1A4A1027934) through the National Research Foundation by the Ministry of Science and ICT, Korea. M.C. acknowledges support from Leverhulme Trust Research grant RPG-2019-227.
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H.S.S., M.C. and H.J.S. planned and supervised this reply; S.H., K.Y.M., G.K, S.I.Y. and H.S.S. performed experiments for growth and characterization; C.-S.L., M.-H.L. and H.-J.S. fabricated electrical devices; S.W.K measured ellipsometry and performed analysis; A.A. and S.R. performed calculations of dielectric constants; M.C. wrote the reply with H.S.S. and all authors agreed on its content; the remaining authors of the original paper did not contribute to this Reply.
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Extended data figures and tables
Extended Data Fig. 1 Typical capacitance–voltage (C–V) curves of a MIM device with a-BN film at frequencies 100 kHz and 1 MHz.
The device shows neither depletion nor hysteresis.
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Hong, S., Lee, MH., Kim, S.W. et al. Reply to: On the measured dielectric constant of amorphous boron nitride. Nature 590, E8–E10 (2021). https://doi.org/10.1038/s41586-020-03163-x
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DOI: https://doi.org/10.1038/s41586-020-03163-x
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