Abstract
Semiconductor qubits have a small footprint and so are appealing for building densely integrated quantum processors. However, fabricating them at high densities raises the issue of noise correlated across different qubits, which is of practical concern for scalability and fault tolerance. Here, we analyse and quantify the degree of noise correlation in a pair of neighbouring silicon spin qubits around 100 nm apart. We observe strong interqubit noise correlations with a correlation strength as large as 0.7 at around 1 Hz, even in the regime where the spin–spin exchange interaction contributes negligibly. We find that fluctuations of single-spin precession rates are strongly correlated with exchange noise, showing that they have an electrical origin. Noise cross-correlations have thus enabled us to pinpoint the most influential noise in our device. Our work presents a powerful tool set to assess and identify the noise acting on multiple qubits and highlights the importance of long-range electric noise in densely packed silicon spin qubits.
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Data availability
All data in this study are available from the Zenodo repository at https://doi.org/10.5281/zenodo.7467057. Source data are provided with this paper.
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Acknowledgements
We are grateful to Á. Gutiérrez-Rubio for fruitful discussions. Part of this work was financially supported by MEXT Quantum Leap Flagship Programme (MEXT Q-LEAP) grant no. JPMXS0118069228 (S.T.), JST PRESTO grant nos. JPMJPR21BA (J.Y.) and JPMJPR2017 (T.N.), JST Moonshot R&D grant nos. JPMJMS2065 (J.Y., T.N.) and JPMJMS226B (S.T., T.N.), JST CREST grant no. JPMJCR1675 (S.T., D.L.), JSPS KAKENHI grant nos. JP21K14485 (J.Y.), JP23H01790 (J.Y., A.N.) and JP23H05455 (J.Y., K.T.), Swiss National Science Foundation and NCCR SPIN grant no. 51NF40-180604 (D.L.), The Precise Measurement Technology Promotion Foundation (J.Y.), Suematsu Fund (J.Y.) and Advanced Technology Institute Research Grants (J.Y.).
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J.Y. conceived and performed the experiment. J.S.R.-A. and P.S. assisted J.Y. with data analysis and performed device modelling. K.T. fabricated the device. A.N. and T.N. contributed to the measurement setup. D.L. and S.T. supervised the project.
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Nature Physics thanks Natalia Ares, Łukasz Cywiński and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.
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Yoneda, J., Rojas-Arias, J.S., Stano, P. et al. Noise-correlation spectrum for a pair of spin qubits in silicon. Nat. Phys. 19, 1793–1798 (2023). https://doi.org/10.1038/s41567-023-02238-6
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DOI: https://doi.org/10.1038/s41567-023-02238-6
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