Abstract
High-performance deep-red light-emitting diodes (LEDs) are important for biomedical and agricultural applications. However, the development of bright and stable solution-processed deep-red LEDs remains challenging. Here we design a switchable interfacial deprotonation reaction between the perovskite and electron-transporting layer to fabricate high-quality CsPbI3 perovskite films, leading to stable and bright deep-red LEDs. Our approach starts with a precursor solution containing guanidine hydroiodide and a layer of alkaline zinc hydroxide. On annealing, the interfacial reaction is switched on, leading to the formation of high-quality CsPbI3. The alkaline zinc hydroxide layer is simultaneously converted in situ to alkalescent ZnO, which prevents the formation of the undesirable yellow-phase CsPbI3 perovskite. As a result, our perovskite LEDs based on CsPbI3 demonstrate a long half-lifetime of approximately 33.6 h under a driving current density of 100 mA cm–2 and an exceptionally high radiance of around 1,980 W sr−1 m–2. Moreover, by partly substituting iodide with bromide, we achieve bright deep-red perovskite LEDs with an emission wavelength of 691 nm and an operational half-lifetime of 50.3 h at 100 mA cm–2.
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Data availability
Data supporting the findings in the present work are available in the Article and the Supplementary Information. Any additional information can be obtained from the corresponding authors on reasonable request. Source data are provided with this paper.
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Acknowledgements
We thank the Center of Electron Microscopy, Zhejiang University, for providing the transmission electron microscopy characterization, focused-ion-beam micromachining and energy-dispersive X-ray spectroscopy analyses that greatly assisted the research. We thank X. Zhu from the State Key Laboratory of Silicon and Advanced Semiconductor Materials for the help on XPS characterizations. We thank D. Di and B. Zhao for the helpful discussion on optical measurements. We thank Y. Deng and D. Chen for supporting the research in the initial stage. We thank L. Chen for assistance in drawing the schemes and the inspiring discussion on the research. We thank H. Wang and Y. Qi for the inspiring discussion on the research. We thank Y. Hao for the technical support for the research. This work was financially supported by the National Key Research and Development Program of China (2022YFA1204800) (to Y.L.), National Natural Science Foundation of China (21975220) (to Y.J.), the China National Postdoctoral Program for Innovative Talents (BX20200288) (to Y.L.) and the China Postdoctoral Science Foundation (2021M70278 and 2023M733019) (to Y.L.).
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Y.J., Y.L. and J.Z. conceived the idea and designed the experiments. Y.J., Z.Y. and Y.L. supervised the work. J.Z. and X.S. carried out the device fabrication and characterizations. J.Z., X.S., W.J., K.N. and J.L. conducted the optical characterizations. J.Z., S.H., X.Z. and X.S. carried out the XPS and atomic force microscopy experiments. G.S. conducted the solid-state nuclear magnetic resonance spectroscopy characterizations. T.S., X.S. and Y.L. conducted the STEM characterizations. Y.L., J.Z. and Y.J. wrote the first draft of the manuscript. H.H. and Z.Y. participated in the data analysis. All authors discussed the results and commented on the manuscript.
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Zeng, J., Sun, X., Liu, Y. et al. Switchable interfacial reaction enables bright and stable deep-red perovskite light-emitting diodes. Nat. Photon. 18, 325–333 (2024). https://doi.org/10.1038/s41566-023-01369-9
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DOI: https://doi.org/10.1038/s41566-023-01369-9