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Nanoelectronics

Low-temperature MoS2 growth on CMOS wafers

Nature Nanotechnology volume 18, pages 446–447 (2023)Cite this article

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Growth of molybdenum disulfide at 275 °C and monolithic integration of 2D transistors with silicon complementary metal oxide semiconductor circuits have been demonstrated.

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Fig. 1: Schematic of MoS2 growth at T < 300 °C.

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Authors and Affiliations

  1. Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

    Max C. Lemme

  2. AMO GmbH, Aachen, Germany

    Alwin Daus

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  1. Max C. Lemme
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  2. Alwin Daus
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Correspondence to Max C. Lemme.

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Lemme, M.C., Daus, A. Low-temperature MoS2 growth on CMOS wafers. Nat. Nanotechnol. 18, 446–447 (2023). https://doi.org/10.1038/s41565-023-01390-7

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