Large-scale growth of transition metal dichalcogenides and their subsequent integration with compound semiconductors is one of the major obstacles for two-dimensional materials implementation in optoelectronics applications such as active matrix displays or optical sensors. Here we present a novel transition metal dichalcogenide-on-compound-semiconductor fabrication method that is compatible with a batch microfabrication process. We show how a thin film of molybdenum disulfide (MoS2) can be directly synthesized on a gallium-nitride-based epitaxial wafer to form a thin film transistor array. Subsequently, the MoS2 thin film transistor was monolithically integrated with micro-light-emitting-diode (micro-LED) devices to produce an active matrix micro-LED display. In addition, we demonstrate a simple approach to obtain red and green colours through the printing of quantum dots on a blue micro-LED, which allows for the scalable fabrication of full-colour micro-LED displays. This strategy represents a promising route to attain heterogeneous integration, which is essential for high-performance optoelectronic systems that can incorporate the established semiconductor technology and emerging two-dimensional materials.
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The data that support the plots within these paper and other findings of this study are available from the corresponding author upon reasonable request. Source data are provided with this paper.
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This work was supported by the National Research Foundation of Korea, funded by the Korean government (the Ministry of Science and ICT; NRF-2015R1A3A2066337) and the Yonsei Signature Research Cluster Program.
The authors declare no competing interests.
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Supplementary Figs. 1–23 and Tables 1 and 2.
Active matrix micro-LED display by use of MoS2 transistor.
A 100 ppi active matrix micro-LED display on a 2 inch sapphire substrate.
A 508 ppi active matrix micro-LED display.
Full-colour active matrix micro-LED display.
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Hwangbo, S., Hu, L., Hoang, A.T. et al. Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor. Nat. Nanotechnol. 17, 500–506 (2022). https://doi.org/10.1038/s41565-022-01102-7