Abstract
The topological nature of the quantum anomalous Hall effect (QAHE) causes a dissipationless chiral edge current at the sample boundary1,2. Of fundamental interest is whether the chirality of the band structure manifests itself in charge transport properties. Here we report the observation of large non-reciprocal charge transport3 in a magnetic topological insulator, Cr-doped (Bi,Sb)2Te3. When the surface massive Dirac band is slightly carrier doped by a gate voltage, the edge state starts to dissipate and exhibits a current-direction-dependent resistance with a directional difference as large as 26%. The polarity of this diode effect depends on the magnetization direction as well as on the carrier type, electrons or holes. The correlation between the non-reciprocal resistance and the Hall resistance indicates that the non-reciprocity originates from the interplay between the chiral edge state and the Dirac surface state.
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The authors declare that all relevant data supporting the findings of this study are available within the article and its Supplementary Information. Additional data are available from the corresponding author upon reasonable request. Source data are provided with this paper.
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Acknowledgements
This research was supported by a JSPS/MEXT Grant-in-Aid for Scientific Research (no. 15H05853, no. 15H05867, no. 16J03476, no. 17H04846, no. 18H03676, no. 18H04229 and no. 18H01155), JST CREST (no. JPMJCR16F1, no. JPMJCR1874 and no. JPMJCR19T3) and JST PRESTO (no. JPMJPR19L9).
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Y.T. conceived the project. K.Y., M.M. and R.Y. grew the thin films with the help of A.T., M. Kawamura, K.S.T. and M. Kawasaki. K.Y. and R.Y. fabricated the device and performed the measurements. T.M. and N.N. performed the theoretical calculations. K.Y., T.M., N.N. and Y.T. jointly wrote the manuscript with contributions from all the authors.
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Supplementary text, Figs. 1–7, Table 1 and refs. 1–37.
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Yasuda, K., Morimoto, T., Yoshimi, R. et al. Large non-reciprocal charge transport mediated by quantum anomalous Hall edge states. Nat. Nanotechnol. 15, 831–835 (2020). https://doi.org/10.1038/s41565-020-0733-2
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DOI: https://doi.org/10.1038/s41565-020-0733-2
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