Dirac-point photocurrents due to the photothermoelectric effect in non-uniform graphene devices

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Fig. 1: Calculated charge carrier density (colour scale) induced by a back gate in a cross-shaped graphene device with arms of width 800 nm over a 300 nm SiO2 gate dielectric.
Fig. 2: Comparison of PTE model and experiment.

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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.


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We acknowledge support of the ARC Centre of Excellence FLEET (grant no. CE170100039).

Author information

M.S.F. conceived this work and carried out the simulations in Fig. 2. N.V.M. carried out the simulation in Fig. 1. M.S.F. and N.V.M. wrote the manuscript together.

Correspondence to Michael S. Fuhrer.

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Fuhrer, M.S., Medhekar, N.V. Dirac-point photocurrents due to the photothermoelectric effect in non-uniform graphene devices. Nat. Nanotechnol. (2020). https://doi.org/10.1038/s41565-020-0637-1

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