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Tunnelling-recombination layer made of polycrystalline silicon for perovskite tandem photovoltaics

A high-quality tunnelling-recombination layer composed of a boron- and phosphorus-doped polycrystalline silicon (poly-Si) stack is obtained by suppressing dopant interdiffusion. Strong adsorption of the hole-transport layer on the poly-Si substrate enables efficient charge-carrier transport and extraction, enabling the realization of a perovskite/tunnel oxide passivating contact tandem solar cell with 29.2% efficiency.

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Fig. 1: A perovskite/TOPCon TSC with a poly-Si TRL.

References

  1. Mariotti, S. et al. Interface engineering for high-performance, triple-halide perovskite–silicon tandem solar cells. Science 381, 63–69 (2023). This paper reports a noteworthy efficiency of 32.5% in perovskite/c-Si TSCs featuring a conventional TCO RL.

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This is a summary of: Zheng, J. et al. Polycrystalline silicon tunnelling recombination layers for high-efficiency perovskite/tunnel oxide passivating contact tandem solar cells. Nat. Energy https://doi.org/10.1038/s41560-023-01382-w (2023).

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Tunnelling-recombination layer made of polycrystalline silicon for perovskite tandem photovoltaics. Nat Energy 8, 1190–1191 (2023). https://doi.org/10.1038/s41560-023-01383-9

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