A high-quality tunnelling-recombination layer composed of a boron- and phosphorus-doped polycrystalline silicon (poly-Si) stack is obtained by suppressing dopant interdiffusion. Strong adsorption of the hole-transport layer on the poly-Si substrate enables efficient charge-carrier transport and extraction, enabling the realization of a perovskite/tunnel oxide passivating contact tandem solar cell with 29.2% efficiency.
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References
Mariotti, S. et al. Interface engineering for high-performance, triple-halide perovskite–silicon tandem solar cells. Science 381, 63–69 (2023). This paper reports a noteworthy efficiency of 32.5% in perovskite/c-Si TSCs featuring a conventional TCO RL.
Aydin, E. et al. Interplay between temperature and bandgap energies on the outdoor performance of perovskite/silicon tandem solar cells. Nat. Energy 5, 851–859 (2020). This paper presents a perovskite/c-Si TSC with a nc-Si:H(p+)/nc-Si:H(n+) TRL.
Zheng, J. et al. Balancing charge-carrier transport and recombination for perovskite/TOPCon tandem solar cells with double-textured structures. Adv. Energy Mater. 13, 2203006 (2022). This paper presents the optimization of passivation and contact performance for perovskite/TOPCon TSCs.
Ballif, C. et al. Status and perspectives of crystalline silicon photovoltaics in research and industry. Nat. Rev. Mater. 7, 597–616 (2022). A review article that presents the importance of TOPCon solar cells in the photovoltaics industry.
Luderer, C. et al. Passivating and low-resistive poly-Si tunneling junction enabling high-efficiency monolithic perovskite/silicon tandem solar cells. Appl. Phys. Lett. 115, 182105 (2019). This paper presents a high-quality poly-Si(p+)/poly-Si(n+) tunnelling junction with good passivation and low resistance.
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This is a summary of: Zheng, J. et al. Polycrystalline silicon tunnelling recombination layers for high-efficiency perovskite/tunnel oxide passivating contact tandem solar cells. Nat. Energy https://doi.org/10.1038/s41560-023-01382-w (2023).
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Tunnelling-recombination layer made of polycrystalline silicon for perovskite tandem photovoltaics. Nat Energy 8, 1190–1191 (2023). https://doi.org/10.1038/s41560-023-01383-9
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DOI: https://doi.org/10.1038/s41560-023-01383-9