Abstract
A group of negative photoresists has been developed by sensitizing poly(vinylphenol), or more exactly, poly(p-hydroxystyrene) with aromatic azides. The resists exhibit high resolution capability because they do not swell in aqueous alkaline developers. Examples of azides used are 3,3′-diazidodiphenylsulfone (I), 4-azidochalcone (II), 3-(p-azidostyryl)- 5,5-dimethyl-2-cyclohexen-1-one (III), 3-(4-(p-azidophenyl)-1,3-butadienyl)-5,5-dimethyl-2-cyclohexen-1-one (IV), and 2-(p-azidostyryl)-4-benzylideneoxazolone (V). Sensitization of poly(vinylphenol) with I gives a deep UV resist. Photoresist composed of poly(vinylphenol) and II or III is suited for exposure to i line (365 nm) of mercury lamp. It resolves 0.6 μm line and space patterns. When IV or V is used as a sensitizer, the resit is sensitive to visible light such as g line (436 nm).
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Nonogaki, S. High-Resolution Negative Photoresists Composed of Phenolic Resin and Aromatic Azide. Polym J 19, 99–104 (1987). https://doi.org/10.1295/polymj.19.99
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DOI: https://doi.org/10.1295/polymj.19.99