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Complex oxide ferroelectrics

Electrostatic doping by domain walls

Nature Nanotechnology volume 10, pages 571–573 (2015)Cite this article

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Charged domain walls in ferroelectric thin films can be manipulated at the nanoscale and used to induce charges in the surrounding insulating material.

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Figure 1: Electrostatic doping by charged domain walls.

Change history

  • 19 June 2015

    In this News & Views article originally published online, the first name of the corresponding author of the linked paper Arnaud Crassous was misspelt. This has been corrected in the online versions.

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Authors and Affiliations

  1. Petro Maksymovych is at the Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA,

    Petro Maksymovych

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  1. Petro Maksymovych
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Correspondence to Petro Maksymovych.

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Maksymovych, P. Electrostatic doping by domain walls. Nature Nanotech 10, 571–573 (2015). https://doi.org/10.1038/nnano.2015.133

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