The use of asymmetrically biased quantum point contacts in semiconductor heterostructures paves the way for the realization of an all-electric spin field-effect transistor.
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Width dependence of the 0.5 × (2e2/h) conductance plateau in InAs quantum point contacts in presence of lateral spin-orbit coupling
Scientific Reports Open Access 21 August 2019
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Change history
27 February 2015
In the version of this News & Views article previously published, the semiconductor heterostructure 'AlGaAs/GaAs' should have been 'InGaAs/InAlAs'. Corrected in the online versions after print.
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Cahay, M. Closer to an all-electric device. Nature Nanotech 10, 21–22 (2015). https://doi.org/10.1038/nnano.2014.305
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DOI: https://doi.org/10.1038/nnano.2014.305
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Width dependence of the 0.5 × (2e2/h) conductance plateau in InAs quantum point contacts in presence of lateral spin-orbit coupling
Scientific Reports (2019)
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Correction
Nature Nanotechnology (2015)
