Skip to main content

Thank you for visiting You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

This is a preview of subscription content

Access options

Buy article

Get time limited or full article access on ReadCube.


All prices are NET prices.

Figure 1: Hall-effect measurements on monolayer MoS2.


  1. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Nature Nanotech. 6, 147–150 (2011).

    CAS  Article  Google Scholar 

  2. Lemme, M. C. IEEE Electron. Dev. Lett. 28, 282–284 (2007).

    CAS  Article  Google Scholar 

  3. Fuhrer, M. S. & Hone, J. Nature Nanotech. 8, 146–147 (2013).

    CAS  Article  Google Scholar 

  4. Novoselov, K. S. et al. Proc. Natl Acad. Sci. USA 102, 10451–10453 (2005).

    CAS  Article  Google Scholar 

  5. Podzorov, V., Gershenson, M. E., Kloc, C., Zeis, R. & Bucher, E. Appl. Phys. Lett. 84, 3301–3303 (2004).

    CAS  Article  Google Scholar 

  6. Radisavljevic, B. & Kis, A. Preprint at (2013).

Download references

Author information

Authors and Affiliations


Corresponding author

Correspondence to A. Kis.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Radisavljevic, B., Kis, A. Reply to 'Measurement of mobility in dual-gated MoS2 transistors'. Nature Nanotech 8, 147–148 (2013).

Download citation

  • Published:

  • Issue Date:

  • DOI:

Further reading


Quick links

Find nanotechnology articles, nanomaterial data and patents all in one place. Visit Nano by Nature Research