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Nanoelectronics

Negative capacitance to the rescue?

Nature Nanotechnology volume 3, pages 77–78 (2008)Cite this article

Can ferroelectric materials help transistors overcome the 'Boltzmann tyranny' that limits the performances of conventional semiconductor devices?

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Figure 1: Schematic diagram of a field-effect transistor (FET).

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Authors and Affiliations

  1. Victor V. Zhirnov and Ralph K. Cavin are at the Semiconductor Research Corporation, Research Triangle Park, North Carolina 27709, USA. Victor.Zhirnov@src.org,

    Victor V. Zhirnov & Ralph K. Cavin

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  1. Victor V. Zhirnov
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  2. Ralph K. Cavin
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Zhirnov, V., Cavin, R. Negative capacitance to the rescue?. Nature Nanotech 3, 77–78 (2008). https://doi.org/10.1038/nnano.2008.18

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