Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates

Abstract

Free-standing nanostructures such as suspended carbon nanotubes1, graphene layers2, III-V nanorod photonic crystals3 and three-dimensional structures4 have recently attracted attention because they could form the basis of devices with unique electronic, optoelectronic and electromechanical characteristics. Here we report the growth by molecular beam epitaxy of free-standing nanoplates of InAs that are close to being atomically plane. The structural and transport properties of these semiconducting nanoplates have been examined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and low-temperature electron transport measurements. The carrier density of the nanoplates can be reduced to zero by applying a voltage to a nearby gate electrode, creating a new type of suspended quantum well that can be used to explore low-dimensional electron transport. The electronic and optical properties of such systems also make them potentially attractive for photovoltaic and sensing applications5.

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Figure 1: Growth direction and surface orientation of InAs nanoplates grown on a GaAs (100) substrate.
Figure 2: Schematic drawings of the assumed growth process.
Figure 3: Nanoplates on InAs and GaAs substrates.
Figure 4: Transport characteristics of an InAs nanoplate at 320 mK and 2 K using a two-terminal measurement setup.

References

  1. 1

    Sazonova, V. et al. A tunable carbon nanotube electromechanical oscillator. Nature 431, 284–287 (2004).

    CAS  Article  Google Scholar 

  2. 2

    Scott Bunch, J. et al. Electromechanical resonators from graphene sheets. Science 315, 490–493 (2007).

    Article  Google Scholar 

  3. 3

    Barrelet, C. J. et al. Hybrid single-nanowire photonic crystal and microresonator structures. Nano Lett. 6, 11–15 (2006).

    CAS  Article  Google Scholar 

  4. 4

    Dick, K. A. et al. Synthesis of branched ‘nanotrees’ by controlled seeding of multiple branching events. Nature Mater. 3, 380–384 (2004).

    CAS  Article  Google Scholar 

  5. 5

    University of Copenhagen. An optical device. US patent application 60/868, 826.

  6. 6

    Seifert, W. et al. Growth of one-dimensional nanostructures in MOVPE. J. Cryst. Growth 272, 211–220 (2004).

    CAS  Article  Google Scholar 

  7. 7

    Wensheng, S. et al. Free-standing single crystal silicon nanoribbons. J. Am. Chem. Soc. 123, 11095–11096 (2001).

    Article  Google Scholar 

  8. 8

    Pan, Z. W., Dai, Z. R. & Wang, Z. L. Nanobelts of semiconducting oxides. Science 291, 1947–1949 (2001).

    CAS  Article  Google Scholar 

  9. 9

    Fischbein, M. D. & Drndić M. Nanogaps by direct lithography for high-resolution imaging and electronic characterization of nanostructures. Appl. Phys. Lett. 88, 063116 (2006).

    Article  Google Scholar 

  10. 10

    Tok, E. S., Jones, T. S., Neave, J. H., Zhang, J. & Joyce, B. A. Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films? Appl. Phys. Lett. 71, 3278–3280 (1997).

    CAS  Article  Google Scholar 

  11. 11

    Tok, E. S. et al. Incorporation kinetics of As2 and As4 on GaAs (110). Surf. Sci. 371, 277–288 (1997).

    CAS  Article  Google Scholar 

  12. 12

    Springthorpe A. J. et al. Measurement of GaAs surface oxide desorption temperatures. Appl. Phys. Lett. 50, 77–79 (1987).

    CAS  Article  Google Scholar 

  13. 13

    Dick, K. A. et al. Failure of the vapour–liquid–solid mechanism in Au-assisted MOVPE growth of InAs nanowires. Nano Lett. 5, 761–764 (2005).

    CAS  Article  Google Scholar 

Download references

Acknowledgements

We acknowledge support from the Danish Research Councils FTP (grant number 274-05-0178) and FNU (grant number 272-05-0358) and the EC projects SECOQC, ULTRA-1D and CARDEQ. We thank Thomas Sand Jespersen for discussions.

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Correspondence to Martin Aagesen or Poul Erik Lindelof.

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Supplementary methods and supplementary figures S1–S5 (PDF 2257 kb)

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Aagesen, M., Johnson, E., Sørensen, C. et al. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates. Nature Nanotech 2, 761–764 (2007). https://doi.org/10.1038/nnano.2007.378

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