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Integrated nanoelectronics for the future

Nature Materials volume 6, pages 810–812 (2007)Cite this article

Integrated electronics has come a long way since the invention of the transistor in 1947 and the fabrication of the first integrated circuit in 1958. Given feature sizes as small as a few nanometres, what will the future hold for integrated electronics?

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Figure 1: Non-planar transistors.
Figure 2: Carbon nanotube transistor characteristics compared with standard silicon p-channel MOSFETS.
Figure 3: III–V quantum-well transistor characteristics compared with standard silicon MOSFETS15.

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Authors and Affiliations

  1. Component Research, Technology and Manufacturing Group, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, 97124, Oregon, USA

    Robert Chau, Brian Doyle, Suman Datta & Jack Kavalieros

  2. Logic Technology Development, Technology and Manufacturing Group, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, 97124, Oregon, USA

    Kevin Zhang

Authors
  1. Robert Chau
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  2. Brian Doyle
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  3. Suman Datta
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  4. Jack Kavalieros
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  5. Kevin Zhang
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Correspondence to Robert Chau.

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Chau, R., Doyle, B., Datta, S. et al. Integrated nanoelectronics for the future. Nature Mater 6, 810–812 (2007). https://doi.org/10.1038/nmat2014

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