Abstract
The realization of superconductivity at the interface between a topological insulator and an ironchalcogenide compound is highly attractive for exploring several recent theoretical predictions involving these two new classes of materials. Here we report transport measurements on a Bi_{2}Te_{3}/FeTe heterostructure fabricated via van der Waals epitaxy, which demonstrate superconductivity at the interface, which is induced by the Bi_{2}Te_{3} epilayer with thickness even down to one quintuple layer, though there is no clearcut evidence that the observed superconductivity is induced by the topological surface states. The twodimensional nature of the observed superconductivity with the highest transition temperature around 12 K was verified by the existence of a Berezinsky–Kosterlitz–Thouless transition and the diverging ratio of inplane to outplane upper critical field on approaching the superconducting transition temperature. With the combination of interface superconductivity and Dirac surface states of Bi_{2}Te_{3}, the heterostructure studied in this work provides a novel platform for realizing Majorana fermions.
Introduction
The emergent realization of superconductivity at the interfaces between transition metal oxides has attracted growing attention in recent years^{1}. Typical transition metal oxide interfaces reported so far include LaAlO_{3}/SrTiO_{3} (LAO/STO), LaTiO_{3}/SrTiO_{3}, La_{2}CuO_{4}/La_{2−x}Sr_{x}CuO_{4} and Ba_{1−x}Nd_{x}CuO_{2}/CaCuO_{2} (refs 2, 3, 4, 5, 6, 7). Interface superconductivity between chalcogenides such as PbTe/PbSe and PbSe/PbS has also been reported^{8}.
Recently, the discovery of superconductivity in layered ironbased materials has steered the hightransitiontemperature (T_{c}) superconductors to an iron age. These socalled ironbased superconductors (FeSC) are the focus of contemporary research due to their high upper critical fields, large critical current densities and unconventional pairing symmetries. Among them, the 11type ironchalcogenide FeSCs have the simplest chemical composition and a relatively simple crystalline structure^{9,10,11}.
Since the discovery of FeSC in 2007, another novel state of quantum matter, the topological insulator (TI), has become an important topic in condensed matter physics^{12,13}. The robust topological surface states are topologically protected against timereversalinvariant perturbations. More interestingly, inducing swave superconductivity on the surface state of a TI results in a pwave superconductor that hosts Majorana fermions in its vortex cores^{12,13}. Motivated by the prospect of creating Majorana fermions, which are nonAbelian particles and have potential applications in quantum computations^{14}, several attempts have been made to induce superconductivity on TI surfaces using bulk superconductors^{15,16,17,18}.
In this work, we find that interface superconductivity is induced when a thin film of TI, Bi_{2}Te_{3,} is grown on a nonsuperconducting FeTe thin film. We show that the resulting superconductivity possesses the characteristics of FeSCs with the highest T_{c} of ~\n12 K. The superconductivity exhibits twodimensional (2D) nature by showing the evidence of a Berezinsky–Kosterlitz–Thouless (BKT) transition and the diverging ratio of inplane to outplane upper critical field on approaching T_{c}. Its superconducting thickness is estimated to be ~\n7.0±1.1 nm, based on the measured upper critical fields. This work provides the first example of interface superconductivity between a TI and iron chalcogenide. Due to the possible unconventional pairing symmetry of FeSC^{19}, the Bi_{2}Te_{3}/FeTe heterostructures also provide new platforms for studying the interplay between unconventional superconductors and TI surface states as well as for creating Majorana fermions.
Results
Structural properties of the heterostructure
Bi_{2}Te_{3} is one of the simplest threedimensional TIs, whose surface states consist of a single Dirac cone at the Γ point^{20}. Its unit cell is formed by 3 quintuple layers (QLs), bonded by van der Waals (vdW) forces along the [0001] direction. Each QL contains two atomic sheets of Bi and three atomic sheets of Te, which are covalently bonded. The unit cell of tetragonal FeTe is composed of two Te–Fe–Te triple layers stacked along the [001] direction. Also, the neighbouring triple layers are bonded via vdW force. Attributed to the vdW bonding nature, even though Bi_{2}Te_{3} possesses a sixfold symmetry and FeTe is in a fourfold symmetry with respect to their caxis directions, the heteroepitaxial growth can still proceed, resulting an atomically sharp interface via vdW expitaxy that allows defectfree epitaxial growth on a substrate possessing large lattice mismatch or distinct crystalline structure as compared with those of the epilayers^{21}. Figure 1 displays the crosssection images of a Bi_{2}Te_{3} (7 QLs) /FeTe (140 nm) heterostructure taken by a spherical aberrationcorrected scanning transmission electron microscope. Both highangle annular dark field (HAADF) and annular bright field images, as shown in Fig. 1a,b, respectively, possess high contrast with significant sensitivity to the atomic number Z, and thus provide robust visibility of both light and heavy atoms. Figure 1c shows the highmagnification HAADF image of this heterostructure, in which one can see that the two layers are separated by a vdW gap and form their own lattices independently, confirming the growth is indeed via vdW epitaxy.
Electrical and magnetotransport properties
It is wellknown that FeTe, as the parent compound of iron chalcogenides, does not exhibit superconductivity either at ambient pressure or under high hydrostatic pressure^{22,23,24,25,26}. Figure 2a shows the resistance versus temperature R(T) curves for a pure 140nmthick FeTe film and a set of Bi_{2}Te_{3}/FeTe heterostructure samples with different thicknesses of Bi_{2}Te_{3}, while the thickness of the FeTe film is fixed at 140 nm. All these curves display a common drop around 50 K, which is attributed to the antiferromagnetic transition of FeTe^{22}. The pure FeTe film does not show superconductivity down to 2 K. To further confirm the nonsuperconducting nature of the asgrown FeTe film, two additional FeTe (140 nm) samples were capped with Pd (3 nm) and ZnSe (5 nm), respectively, and in fact neither of their R(T) curves, which are displayed in Fig. 2a exhibit any superconductivity. However, the Bi_{2}Te_{3}/FeTe heterostructure samples with 3, 5, 7, 9 and 14 QLs of Bi_{2}Te_{3} undergo a transition into a state with zero resistance. The two heterostructure samples with 1 and 2 QLs of Bi_{2}Te_{3} also exhibit a resistance drop although the zeroresistance state has not been reached at the lowest temperature of 280 mK.
The electronic transport data of the heterostructure sample with 7 QLs of Bi_{2}Te_{3} (named as Sample A) obtained via standard fourprobe method is displayed in Fig. 2b. One can see that the current densitydependent voltage V(j) of this sample shows a steplike critical current density profile at temperature below 11.0 K. This characteristic V(j) dependence together with the occurrence of a zeroresistance state provide unambiguous evidences for the existence of superconductivity in the Bi_{2}Te_{3}/FeTe heterostructure. The temperaturedependent critical current density (j_{c}) (defined as the current density at the maximum derivative resistance) as shown in the inset of Fig. 2b enjoys a large magnitude of 10^{−1} A cm^{−1}cm. Figure 3a,b, respectively, show that the superconductivity of this heterostructure sample cannot be fully destroyed by applying magnetic fields up to 14 T either vertical () or parallel () to the interface, which implies its upper critical field (H_{C2}) is quite large. The anomalous high j_{c} and H_{C2} of the Bi_{2}Te_{3}/FeTe heterostructure sample (similar to those observed in FeSC) indicate that its superconductivity may be associated with the induced superconductivity of FeTe (to be discussed later). Furthermore, the superconducting transitions shown in Fig. 3a,b display a large anisotropy regarding the direction of the applied magnetic field since the transitions significantly broaden as increases, while such a broadening is much weaker as increases.
The important role of the Bi_{2}Te_{3} thin film for inducing the observed superconductivity in the Bi_{2}Te_{3}/FeTe heterostructure can be well supported by the results of transport measurements performed on a sample with a 140nmthick FeTe film capped with 7 QLs of Bi_{2}Te_{3} on half of the FeTe surface, named as Sample B (see Supplementary Fig. 1). The detailed characteristics of Sample B addressed in Supplementary Discussion demonstrate that the Bi_{2}Te_{3} thin film is indispensable for the observed superconductivity in the Bi_{2}Te_{3}/FeTe heterostructure.
Evidences of 2D superconductivity
It is worth to point out again the fact that all the Bi_{2}Te_{3}/FeTe heterostructures studied in this work exhibit superconductivity of which the thicknesses of their Bi_{2}Te_{3} thin films vary from 1 to 14 QLs (equivalent to ~\n1–14 nm), while pure Bi_{2}Te_{3} and FeTe films are not superconducting. This fact together with the indispensability of Bi_{2}Te_{3} in the observed superconductivity, as shown via Sample B, implies that the observed superconductivity originates from the interfaces of these heterostructures, suggesting that the source of the superconductivity may be confined to 2D. The confirmation of the 2D nature of the observed superconductivity can be obtained by testing whether the transport properties of the Bi_{2}Te_{3}/FeTe heterostructure possess a signature of a BKT transition that is wellknown to be characterized by a BKT temperature (T_{BKT}), below which a phase transition leading to a 2D topological order emerges^{3,6,27,28,29}. Figure 4a displays the IV isotherms of Sample A on a log–log scale. The straight lines in this plot indicate the powerlaw behaviours, with the powers α equal to the slopes of the lines (V∝I^{α}). Among them, the grey line with a slope of 1 coincides with the hightemperature isotherms (11.5~\n15.0 K), which indicates their ohmic characteristics (V∝I), while the long black line with a slope of 3 marks the initiation of a BKT transition (V∝I^{3}). The short black lines are powerlaw fits to the data at different temperatures. It is worth pointing out that the standard BKT fitting is carried out for data points with current values less than the critical current values corresponding to different temperatures. However, when currents are smaller than some certain values, the system becomes ohmic due to finitesize effects (FSE)^{30}. Thus, the fitting is usually applied to upper portion of the dataset, just below the critical currents. The slopes of the short black lines represent the powers α, which are plotted versus temperature in Fig. 4b. In this figure, the value of α approaches 3 at temperature of ~\n10.1 K, which is thus identified as T_{BKT}, and increases rapidly for temperatures lower than 10.1 K. These observations are regarded as the hallmark of a BKT transition. On the other hand, at the temperature range just above T_{BKT}, the temperaturedependent resistance is predicted to be in a form of R(T)∝R_{0}exp[−b/(T−T_{BKT})^{1/2}], where R_{0} and b are materialspecific parameters^{3,6,27,28,29}. Both the plot of [d(lnR)/dT]^{−2/3} versus T as shown in Fig. 4c and the best fit to the R(T) data using this form as shown in Fig. 4d agree well with the expected BKT behaviour near the transition, yielding T_{BKT} equal to 10.2 and 9.9 K, respectively. These two resulting T_{BKT} values are highly consistent with the value extracted from the power analysis—10.1 K. Our analysis thus provides strong evidences for a 2D nature of the observed superconductivity.
Figure 3c shows the temperaturedependent upper critical field H_{C2}(T) for Sample A in directions parallel () and perpendicular () to the interface. The zeroresistance temperature (corresponding to the midpoint of the rounding region near R=0) is extracted from the R(T) characteristics under different and displayed in Fig. 3a,b. The corresponding H_{C2}(T) values derived from the zeroresistance temperatures were used to estimate the Ginzburg–Landau (GL) coherence length ξ_{GL} and superconducting thickness d_{sc} in our Bi_{2}Te_{3}(7 QLs)/FeTe heterostructure. It is noted that upper critical field for the parallel field direction follows the GL form of temperaturedependent behaviour for a 2D superconducting film, , where Φ_{0} is the flux quantum and ξ_{GL}(0) is the GL coherence length at T=0 K, and the resulting fitting curve is shown in Fig. 3c as well. In the perpendicular field direction, shows the expected linear T dependence, which follows the standard linearized GL theory for 2D superconductors, . The derived H_{C2}(T) values were used to plot the ratio versus reduced temperature T/T_{c} (inset of Fig. 3c) and it shows a diverging characteristic on approaching T_{c}, characteristic for a 2D nature^{31}. Using this temperaturedependent relationship, the mean value of ξ_{GL}(0) can be calculated to be 5.2±1.7 nm. The mean value of superconducting thickness d_{sc} is then estimated to be 7.0±1.1 nm using based on the extracted values and fittings. The fact that the zerotemperature critical field of our Bi_{2}Te_{3}/FeTe heterostructures is much larger than the fields used in taking the data for performing the fitting will certainly cause a substantial uncertainty in the estimations of both ξ_{GL} and d_{sc}. As their fitted values are quite close, one can still regard as a further confirmation for the 2D nature of the observed superconductivity, which is mainly demonstrated by the good match of the transport data with the BKT model and the diverging ratio of on approaching T_{c}. It is worth pointing out that in parallel applied fields, the upper critical field (orbital limit for superconductivity) may be replaced by the Pauli limit for superconductivity. However, in the derivation of the coherence length the extrapolated orbital limit must be used, which agrees with our method of extrapolating the critical field line from our data at low fields close to the zero field critical temperature.
In the following, we would perform the study regarding the crucial role played by FSE and inhomogeneity on the BKT transition in our Bi_{2}Te_{3}(7 QLs)/FeTe heterostructure as well as discuss the validity of our BKT analysis. First, in the infinitesize homogeneous case, the best fit using the infinitesize formula in ref. 32 (where and are the reduced temperatures) for the R–T data of our Bi_{2}Te_{3}(7 QLs)/FeTe sample is obtained with fitted parameters of b~\n0.98, T_{BKT}~\n10.1 K and meanfield T_{c}~\n11.1 K. Thus the range between the meanfield T_{c} and T_{BKT} covers from 11.1 to 10.1 K, which is consistent with the temperature range used in the fittings presented in Fig. 4c,d. The value of the parameter ‘b’ in the equation of R(T)∝R_{0}exp[−b/(T−T_{BKT})^{1/2}] mentioned above is determined to be ~\n2.1 in fitting the standard BKT model. The fact that ‘b’ is in the order of 1, is consistent with the expectation of a recent theoretical model^{33}. Here, ‘b’ was mentioned as a material parameter in the related works regarding 2D superconductors^{3,6}. As pointed out in ref. 33, ‘b’ appears in the exponential expression for the BKT correlation length . ‘b’ is meaningful in the sense that it appears in the condition for the use of the correlation length equation mentioned above. In our case, at the lower limit when , thus, well satisfies the condition.
In addition, the rounding of the transition near R=0 in the R–T curve shown in Fig. 2a is expected to be due to FSE. Based on ref. 33, we divided the R–T transition into four regions, GLfluctuation region, BKTtransition region, FSEdominated region and superconducting region, as shown in Fig. 5, where the data are well fitted with the interpolating formula in ref. 33 for an inhomogeneity effect model (red curve). At T<T_{BKT}, FSE arises and the normalized resistance starts to deviate from the infinitesize limit (black curve). As described in ref. 33, inhomogeneity effects (or FSE) is associated with the scale of the sample dimensions or even smaller, and even though the system does not have a true granular structure, the homogeneous regions will have a typical size L_{hom} smaller than the physical size L_{phys} of the sample. The physical dimension of our sample is L_{phys}~\n500 μm and the critical current at T_{BKT} is I_{c}~\n5 × 10^{−3} A. Using the equation shown in ref. 33, the characteristic length scale of our sample is estimated to be L_{hom}~\n0.3 μm. As expected by ref. 33, L_{hom}<L_{phys} will give rise to a critical current for lineartononlinear characteristic larger than expected for the homogeneous case, which is also consistent with the characteristics of j_{c} versus T relationship of our sample as shown in the inset of Fig. 2b. In the infinitesize homogeneous case, a jump is expected from α=3 to α=1, however, for both our heterostructure sample and the LAO/STO interface superconductor^{3}, the α value seems to show a smooth transition rather than a sudden sharp jump. As explained in ref. 33, when taking the FSE into consideration, the change of α will be observed to possess a smooth downturn near T_{BKT}, which is exactly what we observed in our data.
Discussion
To reveal the origin of the 2D superconductivity at the interface of the heterostructure through either a theoretical or an experimental approach always remains to be a big challenge. Based on the data extracted from Fig. 2a, one can relate T_{c(onset)} of the Bi_{2}Te_{3}/FeTe heterostructures with the Bi_{2}Te_{3}thickness. As shown in Fig. 2c, T_{c(onset)} increases steadily with the increase of the thickness of Bi_{2}Te_{3}, and then reaches a plateau value of ~\n11.5 K when the thickness of Bi_{2}Te_{3} reaches 5 QLs, a critical thickness that sets the length scale of Bi_{2}Te_{3} for observing the 2D superconductivity. Such dependence seems to suggest that chemical doping of FeTe, perhaps involving Bi, may be the cause of the observed superconductivity. This possible mechanism was investigated by carrying out atomicresolution energydispersive Xray spectroscopy (EDS) mapping across the Bi_{2}Te_{3}/FeTe interface as shown in Fig. 1d, which however shows that the fall of the Bi profile at the interface is quite sharp within the spatial resolution limit of atomicresolution EDS derived from atomically sharp interfaces^{34}. We have also performed extrinsic Bi doping of FeTe in two approaches, one with an elemental Bi source and the other with a Bi_{2}Te_{3} compound source (more details can be found in Supplementary Discussion). It was found that the R versus T behaviours of these samples do not show any superconductivity feature. Both the results of atomicresolution EDS and extrinsic Bi doping described above seem to imply that the observed 2D superconductivity at the Bi_{2}Te_{3}/FeTe interface may not be caused by Bi incorporation in the FeTe layer. We also provide a discussion about possible intrinsic Te doping in the FeTe layer in the Supplementary Discussion, which also implies that intrinsic Te doping is also unlikely to be the cause of the observed superconductivity.
It is also worth to point out that one may argue this superconductivity may come from straininduced superconductivity in FeTe as observed when FeTe was grown on latticemismatch substrates^{35}. However, the growth of the top Bi_{2}Te_{3} layer on the bottom FeTe layer of the heterostructures studied in this work is via vdW epitaxy that is believed not to introduce substantial lattice distortion on both layer components. This is further confirmed by the results of a statistical approach used to determine the lattice parameters of FeTe and Bi_{2}Te_{3}. Figure 1e shows the variation of the lattice parameters of FeTe (left) and Bi_{2}Te_{3} (right) extracted from their HAADF images. As can be seen in this figure, except a small crystalline distortion appears in a portion of FeTe near the FeTe/ZnSe interface; the lattice parameters (a and c) of both the Bi_{2}Te_{3} and FeTe portions away from the Bi_{2}Te_{3}/FeTe interface well match with their bulk values. Thus, significant strain built up at the interface of the heterostructure is unlikely.
As discussed above, the anomalous high j_{c} and H_{C2} of the Bi_{2}Te_{3}/FeTe heterostructure sample are similar to those observed in Se doped FeTe thin films, in which the antiferromagnetic order of the parent FeTe is destroyed and the sample becomes superconducting. This indicates that the superconductivity of the Bi_{2}Te_{3}/FeTe heterostructure may be associated with the appearance of a superconducting layer of FeTe near the interface. It is possible that the significantly ndoped Bi_{2}Te_{3} thin film, with the presence of the topological surface states, may increase the electron density of the FeTe layers near the interface. This change of electron density may destroy the antiferromagnetic order of FeTe^{22} and turn it into a superconductor. The Bi_{2}Te_{3} thin film fabricated in our molecular beam epitaxy (MBE) system has been previously characterized to be significantly ndoped with the Fermi level lying above the bottom of the conduction band^{36}. As shown by Li et al.^{37}, by performing angleresolved photoemission spectroscopy on MBEgrown Bi_{2}Te_{3} thin films, the surface states can even be detected for thin films down to a single QL of Bi_{2}Te_{3} even though an energy gap opens near the Dirac point due to the coupling between the top and bottom surface states. Within this energy gap, the surface states do not exist as expected. However, the surface states still exist at a chemical potential well above the Dirac point, for example, when the sample is heavily ndoped. Therefore, observing reasonably strong superconductivity for heterostructures with Bi_{2}Te_{3} thin film down to a single QL does not rule out that surface states may play a role in the emergence of superconductivity in these samples. Moreover, the work of Li et al.^{37} also reveals that as the thickness of Bi_{2}Te_{3} increases towards 5 QLs, the surface states reach their full topological nature, which means 5 QLs sets the length scale of fullydeveloped surface states for Bi_{2}Te_{3}. In our case, as shown in Fig. 2c, , 5 QLs is a critical thickness that sets the length scale of Bi_{2}Te_{3} for observing the 2D superconductivity. Since the two length scales mentioned above happen to coincide with each other, it may indicate that the topological nature of Bi_{2}Te_{3} and the observed 2D superconductivity perhaps are correlated with each other. However, it should be pointed out that as the Fermi level of our Bi_{2}Te_{3} layer lies above the bottom of the conduction band, the roles of the surface states and bulk states of Bi_{2}Te_{3} cannot be distinguished. Further studies, such as realizing an intrinsic Bi_{2}Te_{3} layer or tuning the Fermi level to coincide with the Dirac point through either extrinsic doping or adjusting gate bias, may help to clarify this issue.
Below, the novelty and importance of this work are addressed. As compared with the superconductivities found in oxide heterostructures and arrays of superconducting islands on gold^{38}, our work enjoys several novelties: first, an important novelty lies on the difference in the constituents of the materials. The interface superconductivity of our Bi_{2}Te_{3}/FeTe heterostructure likely requires the delicate interplay between the nonsuperconducting TI Bi_{2}Te_{3} and the nonsuperconducting parent compound of Febased superconductor FeTe. Our heterostructure system forms a novel platform for studying the interactions between these two new quantum states of matters. On the other hand, the superconductivity at the interface of oxide heterostructures (like LAO/STO) arises from the interplay of two traditional oxides. Moreover, the optimal T_{c} of our system is about 12 K which is 50 times higher than the T_{c} found in LAO/STO. Second, to the best of our knowledge, our Bi_{2}Te_{3}/FeTe heterostructure and the one unitcellthick FeSe grown on SrTiO_{3} substrate^{9,11} are the only 2D superconductivity systems, reported so far, that consist of an ironchalcogenide component. The 2D superconductivity of our heterostructure distinguishes from that of the latter system by the fact that it arises from an addition of a new component (Bi_{2}Te_{3}), while the latter simply relies on its own dimensionality reduction. Third, comparing with the other 2D superconducting systems reported so far, the Bi_{2}Te_{3} layer in our heterostructure enjoys a strong intrinsic spinorbit coupling^{20} while the inversion symmetry of the observed 2D superconductivity is broken at the interface, this combination could give rise to Rashbatype spinorbit interactions and cause unconventional superconducting paring symmetry at the interface, similar to the LAO/STO system in which Rashba spinorbit coupling is important for the formation of the helical Fulde–Ferrell–Larkin–Ovchinnikov states^{39}. Fourth, our work provides the first example of interface superconductivity between a TI and iron chalcogenide. Due to the possible unconventional pairing symmetry of Febased superconductor^{19}, the Bi_{2}Te_{3}/FeTe heterostructures also provide new platforms for creating and studying Majorana fermions in a 2D template, while several previous attempts have been made to induce superconductivity on TIs using bulk traditional superconductors.
Methods
Film growth
All the samples studied in this work were synthesized by a VGV80H MBE system. Each sample contains a ZnSe buffer layer (50 nm) firstly deposited on the GaAs (001) semiinsulating substrates, followed by a deposition of FeTe with a thickness of 140 nm. The Bi_{2}Te_{3}/FeTe heterostructure samples were fabricated with varying thicknesses of the Bi_{2}Te_{3} thin films of 1, 2, 3, 5, 7, 9 and 14 QLs. A special heterostructure sample with Bi_{2}Te_{3} (7 QLs) deposited on only half of the FeTe (140 nm) surface was prepared by partially covering the FeTe surface with a tantalum strip in situ prior to the deposition of Bi_{2}Te_{3}.
Device fabrications and transport measurements
Each sample was cut into long strips using diamond scriber. Silver paint was used to form circular electrodes with diameters of ~\n0.5 mm and spacing of ~\n2.0 mm, which were connected to the measuring instruments with aluminium wires. Silver has long been characterized as a fast diffuser in Bi_{2}Te_{3}^{40,41}. Based on our calculation using these findings in this reference, it takes the silver paint just 7 min to diffuse to a depth of 100 nm in Bi_{2}Te_{3}. Thus, it is likely that our silver paint electric contacts should penetrate the entire Bi_{2}Te_{3} thin film and reach the interface of the heterostructure and beyond. All the transport measurements were carried out in a Quantum Design PPMS system, which is equipped with a 14T superconducting magnet and possesses a base temperature of 2 K. The transport measurements were conducted using a pulse mode to avoid heating effect, which was indeed found to be negligible for our measurements as consistent results were obtained when either the samples were placed in the Helium4 vapour or in the Helium4 liquid. For the heterostructure samples with thicknesses of 1, 2 and 3 QLs of Bi_{2}Te_{3}, the measuring temperature was further cooled down to 280 mK in an Oxford Cryostat with Helium3 insert.
Additional Information
How to cite this article: He, Q. L. et al. Twodimensional superconductivity at the interface of a Bi_{2}Te_{3}/FeTe heterostructure. Nat. Commun. 5:4247 doi: 10.1038/ncomms5247 (2014).
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Acknowledgements
We gratefully acknowledge the use of the facilities in the Materials Characterization and Preparation Facility (MCPF) at the Hong Kong University of Science and Technology. We also thank Dr Emrah Yücelen, the senior research scientist in NanoPort Europe of the FEI Company, for performing the STEM experiments and useful discussion, as well as Junying Shen for the help in performing the transport measurements. The work described here was substantially supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (project No. 604910, 605011, AOE/P04/083, 605512, 603010 and SEG_HKUST03).
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Author notes
 Qing Lin He
 & Hongchao Liu
These authors contributed equally to this work
Affiliations
William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China
 Qing Lin He
 , Mingquan He
 , Ying Hoi Lai
 , Rolf Lortz
 , Jiannong Wang
 & Iam Keong Sou
Nano Science and Technology Program, the Hong Kong University of Science and Technology, Hong Kong, China
 Qing Lin He
 , Ying Hoi Lai
 & Iam Keong Sou
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China
 Hongchao Liu
 , Mingquan He
 , Hongtao He
 , Kam Tuen Law
 , Rolf Lortz
 , Jiannong Wang
 & Iam Keong Sou
Department of Physics, South University of Science and Technology of China, Shenzhen, 518055 Guangdong, China
 Hongtao He
 & Gan Wang
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Contributions
Q.L.H. and H.L. initiated this study; I.K.S. and Q.L.H. further designed the experiments with contributions from H.L., J.W. and R.L.; Q.L.H. carried out the sample growth and structural characterization with contributions from G.W. and Y.H.L.; H.L., H.H. and M.H. contributed the transport measurements; Q.L.H., J.W., R.L., K.T.L. and I.K.S. performed the data analysis; all authors contributed to the scientific planning and discussions; I.K.S. and Q.L.H. wrote the manuscript with contributions from other authors.
Competing interests
The authors declare no competing financial interests.
Corresponding author
Correspondence to Iam Keong Sou.
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Supplementary Figures 14, Supplementary Table 1, Supplementary Discussion, Supplementary Methods and Supplementary References
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Magnetic topological insulators
Nature Reviews Physics (2019)
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