Abstract
Electrons can be made to pass through a circuit one by one, in nanoscale devices based on the combination of the Coulomb interaction between electrons and their passage by quantum tunnelling through an insulating barrier. Single-electron devices provide a new way of measuring the charge quantum, and clarify how electronic signal processing at the molecular level might function.
This is a preview of subscription content, access via your institution
Access options
Subscribe to this journal
Receive 51 print issues and online access
$199.00 per year
only $3.90 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
Similar content being viewed by others
References
Eigler, D. M. & Schweizer, E. K. Nature 344, 524 (1990).
Wineland, D. J., Itano, W. M. & Van Dyck, R. S. Jr Adv. atom. molec. Phys. 19, 135 (1983).
Van Dyck, R. S. Jr, Schwinberg, P. B. & Dehmelt, H. G. Phys. Rev. D34, 722 (1986).
Millikan, R. A. Phys. Rev. 32, 349 (1911).
Solymar, L. Superconductive Tunneling, Ch. 2 (Chapman and Hall, London. 1972).
Büttiker, M. & Landauer, R. Phys. Rev. Lett. 49, 1739 (1982).
Personn B. N. J. & Baratoff, A. Phys. Rev. B38, 9616 (1988).
Lafarge, P. et al. Z. Phys. B85, 327 (1981).
Esteve, D. Single Charge Tunneling, Ch. 3 (ed. Grabert, H. & Devoret, M. H.) (Plenum, New York, 1992).
Matveev, K. A. Zh. eksp. teor. Fiz. 99, 1598 (1991); (Engl. transl.) Sov. Phys. JETP 72, 892 (1991).
Gorter, C. J. Physica 17, 777 (1951).
Neugebauer, C. A. & Webb, M. B. J. appl. Phys. 33, 74 (1962).
Giaver, I. & Zeller, H. R. Phys. Rev. Lett. 20, 1504 (1968).
Lambe, J. & Jaklevic, R. C. Phys. Rev. Lett. 22, 1371 (1969).
Kulik, I. O. & Shekter, R. I. Zh. eksp. teor. Fiz. 68, 623 (1975); (Engl. transl.) Sov. Phys. JETP 41, 308 (1075).
Dolan, G. J. & Dunsmuir, J. H. Physica B152, 7 (1988).
Fulton, T. A. & Dolan, G. J. Phys. Rev. Lett. 59, 109 (1987).
Likharev, K. K. & Zorin, A. B. J. low Temp. Phys. 59, 347 (1985).
Averin, D. V. & Likharev, K. K. J. low Temp. Phys. 62, 345 (1986).
Widom, A., Megaloudis, G., Clark, T. D., Prance, H. & Prance, R. J. J. Phys. A15, 3877 (1982).
Ben-Jacob, E. & Gefen, Y. Phys. Lett. A108, 289 (1985).
Nazarov, Yu. V. Pis'maZh. eksp. teor. Fiz. 49, 105 (1989); (Engl. transl.) JETP Lett. 49, 126 (1990).
Devoret, M. H. et al. Phys. Rev. Lett. 64, 1824 (1990).
Girvin, S. M., Glazman, L. I., Jonson, M., Penn, D. R. & Stiles, M. D. Phys. Rev. Lett. 64, 3318 (1990).
Cleland, A. N., Schmidt, J. M. & Clarke, J. Phys. Rev. Lett. 64, 1565 (1990).
Kuzmin, L. S., Nazarov, Yu. V., Haviland, D. B., Delsing, P. & Claeson, T. Phys. Rev. Lett. 67, 1161 (1991).
Likharev, K. K. IBM J. Res. Dev. 32, 144 (1988).
Averin, D. V. & Likharev, K. K., in Quantum Effects in Small Disordered Systems (eds Altshuler, B. L., Lee, P. A. & Webb, R. A.) (Elsevier, Amsterdam, 1991).
Schön, G. & Zaikin, A. D. Phys. Rep. 198, 237 (1990).
Single Charge Tunneling (eds Grabert, H. & Devoret, M. H.) (Plenum, New York, 1992).
Single Charge Tunneling spec. Issue Z. Phys. B85, 317–468 (1991).
Single Electron Tunneling and Mesoscopic Devices, Proc. 4th Int. Conf. SQUID '91 (eds Koch, H. & Lübbig, H.) (Springer, Berlin, 1992).
Cleland, A. N., Esteve, D., Urbina, C. & Devoret, M. H. Appl. Phys. Lett. (in the press).
Fraser, D. A. The Physics of Semiconductor Devices (Clarendon, Oxford, 1986).
Barone, A. & Paterno, G. Physics and Applications of the Josephson Effect (Wiley, New York, 1982).
Beenakker, C. W. J. Single Charge Tunneling, Ch. 5 (eds Grabert, H. & Devoret, M. H.) (Plenum, New York, 1992).
Wilkins, R., Ben-Jacob, E. & Jaklevic, R. D. Phys. Rev. Lett. 63, 801 (1989).
Schönenberger, C. Europhys. Lett. (in the press).
Nejoh, H. Nature 353, 640 (1991).
Pothier, H., Lafarge, P., Urbina, C., Esteve, D. & Devoret, M. H. Physica B169, 573 (1991); Europhys. Lett. 17, 259 (1992).
Geerligs, L. J. et al. Phys. Rev. Lett. 64, 2691 (1990).
von Klitzing, K. Rev. mod. Phys. 58, 519 (1986).
Williams, E. R., Gosh, R. N. & Martinis, J. M. J. Res. Natn. Inst. Stand Technol. 97, (1992).
Averin, D. V. & Odintsov, A. A. Phys. Lett. A149, 251 (1989).
Averin, D. V., Odintsov, A. A. & Vyshenskii, S. V. J. Appl. Phys. (in the press).
Jensen, H. D. & Martinis, J. M. Phys. Rev. B46 (in the press).
Pothier, H., Lafarge, P., Esteve, D., Urbina, C. & Devoret, M. H. IEEE Trans. Magn. (in the press).
Lafarge, P. et al. C. R. Acad. Sci. Paris 314, 883 (1992).
Aviram, A. & Ratner, M. Chem. Phys. Lett. 29, 277 (1974); Molecular Electronic Devices (ed. Carter, F. L.) (North-Holland, Amsterdam, 1991).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Devoret, M., Esteve, D. & Urbina, C. Single-electron transfer in metallic nanostructures. Nature 360, 547–553 (1992). https://doi.org/10.1038/360547a0
Issue Date:
DOI: https://doi.org/10.1038/360547a0
This article is cited by
-
Single-electron pumping in a ZnO single-nanobelt quantum dot transistor
Science China Physics, Mechanics & Astronomy (2020)
-
Patterning nanofibrils through the templated growth of multiple modified amyloid peptides
Scientific Reports (2016)
-
Transport in serial spinful multiple-dot systems: The role of electron-electron interactions and coherences
Scientific Reports (2016)
-
1D Tight-Binding Models Render Quantum First Passage Time “Speakable”
International Journal of Theoretical Physics (2015)
-
Tailoring the magnetic properties of ordered 50-nm-diameter CoNi nanowire arrays
Journal of Nanoparticle Research (2013)
Comments
By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.