Abstract
HIGH energy ion bombardment of silicon causes the formation of disordered regions in the lattice, which overlap on continued irradiation to form a complete amorphous layer1. When the irradiated material is annealed at temperatures above 600° C, this amorphous layer recrystallizes either in an epitaxial or polycrystalline manner, depending on ion type, dose, energy and so on.
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References
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DAVIDSON, S. Study of Radiation Damage in Silicon with the Scanning Electron Microscope. Nature 227, 487–488 (1970). https://doi.org/10.1038/227487a0
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DOI: https://doi.org/10.1038/227487a0
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