Letter | Published:

d.c. Dark Hall Mobility Measurements on Anthracene

Naturevolume 214pages266267 (1967) | Download Citation

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Abstract

HALL voltage measurements of mobility against temperature are normally used in the studies of conduction processes in semiconductors, but they have serious limitations for high resistivity materials. It has been found that mobility measurements down to 10−6 m2/Vs are possible provided the resistivity is less than 103 Ω;m (ref. 1). Previously, Mitchell and Putley2 constructed apparatus for measurements on specimens up to 108 Ωm, having mobilities of the order of 10−2 m2/Vs. Dobrovol-skii and Gritsenko3 have shown that for cuprous oxide specimens of resistivity greater than 102 Ωm, it is not possible to separate surface and bulk effects using Hall voltage measurements. For organic semiconductors with aromatic ring structures the bulk resistivity is of the order of 1012 Ωm and surface effects coupled with space charge effects make Hall voltage measurements impracticable.

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References

  1. 1

    Spear, W. E., Conf. Electron. Processes in Low Mobility Solids, Sheffield, April, 1966.

  2. 2

    Mitchell, W. H., and Putley, E. H., J. Sci. Instrum., 36, 134 (1959).

  3. 3

    Dobrovol-skii, V. N., and Gritsenko, Yu. I., Sov. Phys.-Solid State, 4, 2025 (1963).

  4. 4

    Friedman, L., Phys. Rev., 133, A 1668 (1964).

  5. 5

    Delacote, G., and Schott, M., Solid State Commun., 4, 177 (1966).

  6. 6

    Delany, J. L., and Hirsch, J., Solid State Commun., 4, 107 (1966).

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Author notes

  1. R. PETHIG: Department of Electrical Engineering, Portsmouth College of Technology.

Affiliations

  1. Electrical Materials Laboratory, Department of Electrical Engineering, University of Southampton

    • R. PETHIG
    •  & K. MORGAN

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https://doi.org/10.1038/214266a0

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