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Semiconductivity of Free Radicals of Nitric Oxide

Abstract

ONE approach to the problem of producing highly conducting organic materials is to synthesize molecules with unpaired electrons which are capable of interacting to produce a half-filled band and thus exhibiting near-metallic behaviour1. The free radicals examined so far do not show this behaviour2–5, mainly because their stability results from steric hindrance and electron de-localization which prevent both interaction and dimerization. In this connexion it is of interest to compare the radicals containing the N–O group, because in these the stability probably results largely from the nature of the N–O bonding.

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ELEY, D., JONES, K. & WILLIS, M. Semiconductivity of Free Radicals of Nitric Oxide. Nature 212, 72–73 (1966). https://doi.org/10.1038/212072b0

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