Letter | Published:

Graphitization of α-Silicon Carbide

Nature volume 193, pages 569570 (10 February 1962) | Download Citation

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Abstract

IN the course of a comprehensive investigation in these laboratories of the mechanisms by which carbon-containing inorganic and organic materials are converted to graphite, the structural changes which occur when single crystals of α-silicon carbide (6H) are heated in vacuo have been studied. Euler and Czerlinsky1 and Mohun2 have recently examined the high-temperature decomposition of silicon carbide by chlorination. In both investigations the residue was found to be amorphous carbon, which showed no structural relationship to the original silicon carbide. It has been stated by Busch3 that silicon carbide converts to graphite on heating to 2,000° C. in vacuum, but no structural studies of this decomposition have been reported.

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References

  1. 1.

    , and , Silicon Carbide, 155 (Pergamon Press, 1960).

  2. 2.

    , Proc. Fourth Carbon Conf., 443 (Pergamon Press, 1960).

  3. 3.

    , Silicon Carbide, 160 (Pergamon Press, 1960).

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Author information

Affiliations

  1. Northfields Laboratories, Morganite Research and Development, Ltd., Wandsworth, London, S.W.18.

    • D. V. BADAMI

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  1. Search for D. V. BADAMI in:

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DOI

https://doi.org/10.1038/193569a0

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