Abstract
WE have recently made a study of the effect of heat treatment on silicon crystals containing up to 1017 aluminium atoms/c.c. After heating for several hours at a temperature of 1,250° C., transmission infra-red microscopy reveals the presence of a precipitated second phase within the crystals. In samples free of dislocations, these precipitates are needle-shaped and located at random sites, whereas in crystals with a dislocation density between 103 and 104 cm.−2, the precipitation occurs almost entirely along the dislocation lines. These latter precipitates invariably appear as discrete particles strung out along the lines (Fig. 1).
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References
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BULLOUGH, R., NEWMAN, R., WAKEFIELD, J. et al. Precipitation on a Dislocation. Nature 183, 34–35 (1959). https://doi.org/10.1038/183034a0
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DOI: https://doi.org/10.1038/183034a0
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