Abstract
IT has been shown1 that the infra-red absorption band found in silicon at 9µ can be correlated with the oxygen content of the silicon, and that this band is related to the Si—O stretching vibration.
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References
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ROBERTS, D., STEPHENS, P. & HUNT, P. Effect of Oxygen on the Carrier Life-time in Silicon. Nature 180, 665–666 (1957). https://doi.org/10.1038/180665a0
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DOI: https://doi.org/10.1038/180665a0
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