Electronic and spintronic devices articles within Nature Communications

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  • Article
    | Open Access

    Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and low resistance-area product.

    • Mengxing Wang
    • , Wenlong Cai
    •  & Weisheng Zhao

  • Article
    | Open Access

    Polymer monolayer field-effect transistors hold promise for faster circuits, but their performance is currently limited by the polymer packing disorder. Li et al. pre-aggregate polymers in a solution to achieve high carrier mobility of 3 cm2 V−1s−1 in monolayers and utilize them in integrated circuits.

    • Mengmeng Li
    • , Deepthi Kamath Mangalore
    •  & Kamal Asadi

  • Article
    | Open Access

    Silicon is an important material in spintronics but its inefficiency in light emission limits the optical probes for spin transport. Here Chiodi et al. develop ultra-doped silicon light-emitting devices and show that electroluminescence can be used to probe spin phenomena in silicon even at room temperature.

    • F. Chiodi
    • , S. L. Bayliss
    •  & A. D. Chepelianskii

  • Article
    | Open Access

    Unidirectional spin Hall magnetoresistance enables the new spintronic devices but is limited by the low amplitude or working temperature. Here, the authors report the large unidirectional spin Hall magnetoresistance in a topological insulator and ferromagnetic metal bilayer system at relatively higher temperature.

    • Yang Lv
    • , James Kally
    •  & Jian-Ping Wang

  • Article
    | Open Access

    Nonlocal resistances in graphene Hall bars attributed to neutral current Hall effects have been mainly measured at the microscale. Here, the authors observe consistently strong nonlocal signals in Hall bars with channel length ranging from the micrometer up to the millimeter scale, and explain them by field-induced spin-split edge states.

    • Mário Ribeiro
    • , Stephen R. Power
    •  & Fèlix Casanova

  • Article
    | Open Access

    2D materials can be doped with magnetic atoms in order to boost their potential applications in spintronics. Here, the authors fabricate Fe-doped SnS2 monolayers and show that Fe0.021Sn0.979S2 exhibits ferromagnetic behaviour with perpendicular anisotropy at 2 K, and a Curie temperature of 31 K.

    • Bo Li
    • , Tao Xing
    •  & Zhongming Wei

  • Article
    | Open Access

    Control of the directional photocurrent by polarized light in topological insulators may enable topological spintronics but is not yet well understood. Here the authors demonstrate that the directional photocurrent is due to the asymmetric optical transitions between topological surface states and bulk states.

    • Yu Pan
    • , Qing-Ze Wang
    •  & Nitin Samarth

  • Article
    | Open Access

    One of technological challenges building organic electronics is efficient injection of electrons at metal-semiconductor interfaces compared to that of holes. The authors show an air-stable electrode design with induced gap states, which support Fermi level pinning and thus ambipolar carrier injection.

    • Thangavel Kanagasekaran
    • , Hidekazu Shimotani
    •  & Katsumi Tanigaki

  • Article
    | Open Access

    The magnetism-induced chirality in electron transportation is of fundamental importantance in condensed matter physics but the origin is still unclear. Here the authors demonstrate that the asymmetric electron scattering by chiral spin fluctuations can be the key to the electrical magnetochiral effect in MnSi.

    • T. Yokouchi
    • , N. Kanazawa
    •  & Y. Tokura

  • Article
    | Open Access

    Flexible flash memory is crucial to modern electronics, but its fabrication is challenging in the absence of suitable dielectric materials. Here, Lee et al. realize organic memory with retention over 10 years using tunneling and blocking dielectric layers prepared by initiated chemical vapor deposition.

    • Seungwon Lee
    • , Hyejeong Seong
    •  & Seunghyup Yoo

  • Article
    | Open Access

    Light pulses can control magnetism in a material, and the effective creation of magnetic oscillations leads to spintronic devices with higher efficiency. Here, the authors increase the efficiency of magnon excitation by using a material in which orbital angular momenta are not quenched.

    • Takuya Satoh
    • , Ryugo Iida
    •  & B. A. Ivanov

  • Article
    | Open Access

    Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

    • Zhaoen Su
    • , Alexandre B. Tacla
    •  & Sergey M. Frolov

  • Article
    | Open Access

    Spin waves are promising candidates as carriers for energy-efficient information processing, but they have not yet been fully explored application wise. Here the authors theoretically demonstrate that antiferromagnetic domain walls are naturally spin wave polarizers and retarders, two key components of magnonic devices.

    • Jin Lan
    • , Weichao Yu
    •  & Jiang Xiao

  • Article
    | Open Access

    Two-dimensional materials are unique to build heterostructures with contrasting spintronic properties. Here, Dankert and Dash utilize a van der Waals heterostructure with graphene and MoS2to demonstrate an all-electrical device for creation, transport and control of the spin current up to room temperature.

    • André Dankert
    •  & Saroj P. Dash

  • Article
    | Open Access

    Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.

    • Matteo Ghittorelli
    • , Thomas Lenz
    •  & Fabrizio Torricelli

  • Article
    | Open Access

    The study of Maxwell's demon provides a link between information thermodynamics and modern electronics. Using integrated nanometer-scale transistors in a single electron box configuration, Chidaet al., demonstrate the extraction of electrical power by Maxwell’s demon.

    • Kensaku Chida
    • , Samarth Desai
    •  & Akira Fujiwara

  • Article
    | Open Access

    Exploring the interplay of quantum effects enriches the scientific and technological understanding in nanoscale devices. The authors find that two apparently different quantum effects, quantum interference and the Kondo effect, can be unified to describe electron transport in single-molecule junctions.

    • Andrew K. Mitchell
    • , Kim G. L. Pedersen
    •  & Jens Paaske

  • Article
    | Open Access

    Macroscopic magneto-transport measurements enable investigation of the transport properties of materials in the presence of magnetic fields, yet they do not allow access to atomic scale details. Here, the authors combine scanning tunneling potentiometry with magnetic fields to demonstrate nanoscale magneto-transport.

    • Philip Willke
    • , Thomas Kotzott
    •  & Martin Wenderoth

  • Article
    | Open Access

    Dissipative systems may provide another platform towards adaptive electronics beyond adaptive biological systems. Here, Leeet al. report a non-volatile memristive microwave device based on adaptive tuning of the dissipative magnetic domains of a driven ferromagnetic system.

    • Hanju Lee
    • , Barry Friedman
    •  & Kiejin Lee

  • Article
    | Open Access

    Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.

    • Seungho Cho
    • , Chao Yun
    •  & Judith L. MacManus-Driscoll

  • Article
    | Open Access

    Potential electronic applications of graphene rely on controlling its spin-dependent properties. Here, the authors use spin-resolved photoemission spectroscopy to demonstrate how Au-intercalation produces gapped one-dimensional quasi-freestanding graphene on Fe(110) with tunable Fermi surface spin texture.

    • A. Varykhalov
    • , J. Sánchez-Barriga
    •  & O. Rader

  • Article
    | Open Access

    Valleytronic materials allow for band structure minima to be exploited in electronic transport devices in addition to charge and spin. Here, the authors demonstrate selective control of spin–valley-coupled photocurrents via circularly polarized light in molybdenum disulphide grown by chemical vapour deposition.

    • Mustafa Eginligil
    • , Bingchen Cao
    •  & Ting Yu

  • Article |

    Graphene forms low-resistance tunnel barriers for spin injection from a ferromagnet into silicon. Here, the authors fabricate silicon nanowire non-local spin valves with graphene tunnel barriers, evidencing spin accumulation and transport via Hanle spin precession measurements.

    • O. M. J. van ’t Erve
    • , A. L. Friedman
    •  & B. T. Jonker

  • Article |

    Switches made from just a few atoms are the ultimate limit for reducing the size of electronic devices. Inami et al. now demonstrate a room-temperature switch in which the formation of a binary atom cluster on a semiconductor surface is altered using a scanning probe microscopy tip.

    • Eiichi Inami
    • , Ikutaro Hamada
    •  & Yoshiaki Sugimoto

  • Article |

    Spin-waves offer the potential for devices with novel functionalities but controlling their propagation is proving challenging. Here, the authors use locally generated magnetic fields to show how spin-waves can be manipulated to realize a spin-wave multiplexer.

    • K. Vogt
    • , F.Y. Fradin
    •  & H. Schultheiss

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